Hostname: page-component-77c89778f8-m42fx Total loading time: 0 Render date: 2024-07-18T10:33:05.965Z Has data issue: false hasContentIssue false
  • English
  • Français

Application of Atom Probe on Fully Depleted Silicon-On-Insulator (FDSOI) Structures

Published online by Cambridge University Press:  25 July 2016

Ajay Kumar Kambham ,
Dan Flatoff  and
Bianzhu Fu
Ajay Kumar Kambham
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA
Dan Flatoff
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA
Bianzhu Fu
Affiliation:
GLOBALFOUNDRIES, 400 Stone Break Rd Extension, Malta, NY, USA

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 696 - 697
Copyright
© Microscopy Society of America 2016 

References

References:

[1] Shin, C, et al, UCB, SOI Conference 2009 - K Cheng et al., IBM, IEDM 2009.Google Scholar
[2] Sergej, Makovejev, et al, In Solid-State Electronics (p. 6 (2015) doi:10.1016/j.sse.2014.12.007.Google Scholar
[3] Larson, David J, et al, Hand book of Instrumentation and Techniques for Semiconductor Nano structure characterization: Chapter Atom Probe Tomography for Microelectronics.Google Scholar
[4] Ajay Kumar, Kambham, et al, Nanotechnology 24 (2013). 275705 (7pp).Google Scholar