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Birth of a grain boundary: In situ TEM Observation of the Microstructure Evolution in HfO2 Based Memristors

Published online by Cambridge University Press:  30 July 2021

Robert Eilhardt
Affiliation:
Department of Materials Science, Advanced Electron Microscopy, Technical University of Darmstadt, Darmstadt, Hessen, Germany
Alexander Zintler
Affiliation:
Department of Materials Science, Advanced Electron Microscopy, Technical University of Darmstadt, Darmstadt, Hessen, Germany
Oscar Recalde
Affiliation:
Department of Materials Science, Advanced Electron Microscopy, Technical University of Darmstadt, Darmstadt, Hessen, Germany
Déspina Nasiou
Affiliation:
Department of Materials Science, Advanced Electron Microscopy, Technical University of Darmstadt, Darmstadt, Hessen, Germany
Stefan Petzold
Affiliation:
Department of Materials Science, Advanced Thin Film Technologies, Technical University of Darmstadt, Hessen, Germany
Lambert Alff
Affiliation:
Department of Materials Science, Advanced Thin Film Technologies, Technical University of Darmstadt, Hessen, Germany
Leopoldo Molina-Luna
Affiliation:
Department of Materials Science, Advanced Electron Microscopy, Technical University of Darmstadt, Hessen, Germany

Abstract

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Type
Investigating Phase Transitions in Functional Materials and Devices by In Situ/Operando TEM
Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

Ambrogio, S., Balatti, S., Cubeta, A., Calderoni, A., Ramaswamy, N. & Ielmini, D. (2014). Statistical Fluctuations in HfOx Resistive-Switching Memory: Part II—Random Telegraph Noise. IEEE Transactions on Electron Devices 61, 29202927.Google Scholar
Chen, A., Zhirnov, V., Hutchby, J. & Garner, C. M. (2013). ITRS chapter: emerging research devices. Future Fab. Special ITRS Focus (44).Google Scholar
Hermes, C., Bruchhaus, R. & Waser, R. (2011). Forming-Free TiO_2-Based Resistive Switching Devices on CMOS-Compatible W-Plugs. IEEE Electron Device Letters 32, 15881590.CrossRefGoogle Scholar
Petzold, S., Zintler, A., Eilhardt, R., Piros, E., Kaiser, N., Sharath, S. U., Vogel, T., Major, M., McKenna, K. P., Molina-Luna, L. & Alff, L. (2019). Forming-Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices. Advanced Electronic Materials 5, 1900484.CrossRefGoogle Scholar
Salaoru, I., Khiat, A., Li, Q., Berdan, R. & Prodromakis, T. (2013). Pulse-induced resistive and capacitive switching in TiO2 thin film devices. Applied Physics Letters 103, 233513.CrossRefGoogle Scholar