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Challenges and Opportunities in 3D Tri-gate Transistor Characterization

Published online by Cambridge University Press:  23 September 2015

Jiong Zhang ,
Ling Pan ,
Andrew A.Herzing ,
Ray Twesten ,
Paolo Longo ,
Noel Franco ,
Kevin Johnson  and
Zhiyong Ma
Jiong Zhang
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR 97124
Ling Pan
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR 97124
Andrew A.Herzing
Affiliation:
National Institute of Standards and Technology, Material Measurement Laboratory, Gaithersburg, MD 20899 USA
Ray Twesten
Affiliation:
Gatan Inc., Pleasanton, CA 94588
Paolo Longo
Affiliation:
Gatan Inc., Pleasanton, CA 94588
Noel Franco
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR 97124
Kevin Johnson
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR 97124
Zhiyong Ma
Affiliation:
Intel Corporation, Corporate Quality Network, Hillsboro, OR 97124

Abstract

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Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 2333 - 2334
Copyright
Copyright © Microscopy Society of America 2015 

References

References:

[1] Hisamoto, D, et al, IEDM (1989). p. 833.Google Scholar
[2] Auth, C, et al, VLSI. Technology (2012). p. 131.Google Scholar
[3] Thevenaz, P, et al, IEEE Transaction on Image Processing volume 7 (1998). p. 27.CrossRefGoogle Scholar
[4] Wolf, D, et al th.Google Scholar
[5] ORTEM lab engineers and artists are gratefully acknowledged for the TEM works to support the 22nm tri-gate technology.Google Scholar