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Determination of E2 for Nitride Ceramics Using FE-SEM and the Duane–Hunt Limit Procedure

Published online by Cambridge University Press:  28 January 2005

M. Brochu ,
H. Demers ,
R. Gauvin ,
M.D. Pugh  and
R.A.L. Drew
M. Brochu
Affiliation:
Metals and Materials Engineering Department, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, Canada
H. Demers
Affiliation:
Metals and Materials Engineering Department, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, Canada
R. Gauvin
Affiliation:
Metals and Materials Engineering Department, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, Canada
M.D. Pugh
Affiliation:
Mechancial Engineering Department, Concordia University, 1455 blvd. De Maisonneuve West, Montreal, Quebec H3G 1M8, Canada
R.A.L. Drew
Affiliation:
Metals and Materials Engineering Department, McGill University, 3610 University Street, Montreal, Quebec H3A 2B2, Canada
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Abstract

This work demonstrates the possibility of using the Duane–Hunt limit of the bremsstrahlung to determine E2 values of Si3N4 and AlN ceramics. The EDHL versus E0 graph demonstrates that for conductive materials, the experimental curve is parallel to the theoretical (EDHL = E0), but both curves cross in the case of insulators. The intersection points (E2 value), are 3.01 keV for Si3N4 and 2.67 keV for AlN. Imaging of ceramic grain structure at high magnification was performed to demonstrate the validity of the calculated E2 values.

Keywords

FE-SEMDuane–Hunt limitceramicscharging
Type
MATERIALS APPLICATIONS
Information
Microscopy and Microanalysis , Volume 11 , Issue 1 , February 2005 , pp. 56 - 65
Copyright
© 2005 Microscopy Society of America

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References

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