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Quantitative Analysis of Carbon in Silicon Carbide Coated with Carbon

Published online by Cambridge University Press:  06 August 2013

Hongrim Lee ,
Junsu Kim  and
Jondo Yun
Hongrim Lee
Affiliation:
Department of Nano Science and Engineering, Kyungnam University, Woryeong-dong, Masanhabpo-gu, Changwon 631-701, Korea
Junsu Kim
Affiliation:
Department of Advanced Engineering, Graduate School, Kyungnam University, Woryeong-dong, Masanhabpo-gu, Changwon 631-701, Korea
Jondo Yun*
Affiliation:
Department of Nano Science and Engineering, Kyungnam University, Woryeong-dong, Masanhabpo-gu, Changwon 631-701, Korea
*
*Corresponding author. E-mail: jdyun@kyungnam.ac.kr
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Abstract

Nonconductive specimens for scanning electron microscopy or X-ray microanalysis are coated with conductive carbon in order to reduce charging. But carbon film absorbs X-ray fluxes causing errors in measuring chemical composition. Especially when the carbon content is measured, carbon coating not only blocks X-rays but also becomes a source of carbon X-rays. It is thus necessary to determine how much errors are induced by carbon coating, and how thick coating is allowed for the accurate measurement. In this study, quantitative analysis of carbon on silicon carbide with carbon coating films was attempted by electron probe microanalyzer. It was found that measured carbon content increased in a nonlinear manner up to 40% with a film thickness, whereas silicon content decreased slightly. Carbon X-ray intensity was determined by computer simulation, which increased in a linear manner with the thickness. The discrepancy was due to a nucleation and growth of islands and thus a change of density with a thickening of coating film.

Keywords

electron probe microanalysiscarbon coatingsilicon carbidecarbon contentsilicon contentX-ray intensitydensity
Type
Research Article
Information
Microscopy and Microanalysis , Volume 19 , Supplement S5: IUMAS , August 2013 , pp. 1 - 3
Copyright
Copyright © Microscopy Society of America 2013 

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