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(S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications

Published online by Cambridge University Press:  14 March 2016

D. F. Reyes
Affiliation:
Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain.
A. D. Utrilla
Affiliation:
Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain.
T. Ben
Affiliation:
Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain.
J. J. Saborido
Affiliation:
Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain.
J. M. Ulloa
Affiliation:
Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain.
G. Bárcena-Gonzálz
Affiliation:
Department of Computer Science and Engineering, University of Cádiz, Spain.
M. P. Guerrero-Lebrero
Affiliation:
Department of Computer Science and Engineering, University of Cádiz, Spain.
E. Guerrero
Affiliation:
Department of Computer Science and Engineering, University of Cádiz, Spain.
D. Gonzalez
Affiliation:
Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain.

Abstract

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Type
Material Sciences
Copyright
Copyright © Microscopy Society of America 2016 

References

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[5] We acknowledge the Spanish MICINN-MINECO for funding through project MAT2013- 47102-C2, and SCCYT-UCA for technical support.Google Scholar