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Strain-Induced Selective Growth in 1.5% Temper-Rolled Fe∼1%Si

Published online by Cambridge University Press:  23 May 2011

Tricia A. Bennett ,
Peter N. Kalu  and
Anthony D. Rollett
Tricia A. Bennett*
Affiliation:
Materials Science & Engineering Department, Carnegie Mellon University, Pittsburgh, PA, USA Materials Science & Engineering Department, Ghent University, Technology Park 903, B-9052, Ghent, Belgium
Peter N. Kalu
Affiliation:
FAMU-FSU College of Engineering and National High Magnetic Field Laboratory, Tallahassee, FL, USA
Anthony D. Rollett
Affiliation:
Materials Science & Engineering Department, Carnegie Mellon University, Pittsburgh, PA, USA
*
Corresponding author. E-mail: Tricia.Bennett@UGent.be
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Abstract

Strain-induced selective growth was investigated in a 1.5% temper-rolled Fe∼1%Si alloy using the electron backscatter diffraction (EBSD) technique. The EBSD technique was used to quantify the presence of orientation spreads within grains and to show that this particular case of selective growth can be directly related to differences in stored energy as reflected in the geometrically necessary dislocation content. The differences in stored energy were sufficient to give rise to selective growth as evidenced by bi-modal grain sizes.

Keywords

selective growthelectron backscatter diffraction (EBSD)grain average misorientation (GAM)grain orientation spread (GOS)electrical steelstored energy
Type
Electron Backscatter Diffraction Special Section
Information
Microscopy and Microanalysis , Volume 17 , Issue 3 , June 2011 , pp. 362 - 367
Copyright
Copyright © Microscopy Society of America 2011

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References

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