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Three-Dimensional Observation of Edge-Roughness on Poly-Si/TiN Stacked Gate Using Three-Dimensional STEM

Published online by Cambridge University Press:  26 July 2009

S Ono ,
M Yamane ,
A Katakami ,
J Yugami ,
M Koguchi ,
M Ogasawara ,
M Miyakawa ,
H Kakibayashi  and
Y Ohji
S Ono
Affiliation:
Semiconductor Leading Edge Technologies,Japan
M Yamane
Affiliation:
Central Research Laboratory,Hitachi,Japan
A Katakami
Affiliation:
Semiconductor Leading Edge Technologies,Japan
J Yugami
Affiliation:
Semiconductor Leading Edge Technologies,Japan
M Koguchi
Affiliation:
Hitachi,Japan
M Ogasawara
Affiliation:
Hitachi High-Technologies,Japan
M Miyakawa
Affiliation:
Hitachi High-Technologies,Japan
H Kakibayashi
Affiliation:
Hitachi High-Technologies,Japan
Y Ohji
Affiliation:
Semiconductor Leading Edge Technologies,Japan

Extract

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Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Type
Abstract
Information
Microscopy and Microanalysis , Volume 15 , Supplement S2 , July 2009 , pp. 634 - 635
Copyright
Copyright © Microscopy Society of America 2009