The combined focused ion beam (FIB) and scanning electron microscope (SEM), known as the DualBeam, is well-known for its unique ability to produce site-specific thin samples starting from bulk and then attaching the section to a transmission electron microscope (TEM) grid, all in-situ. It has been reported that producing a thin sample using a 30 kV gallium FIB creates surface damage several tens of nanometers deep. However, recent DualBeam technology improvements now enable the FIB to produce thin samples with a thickness well below 50 nanometers and deliver a tightly focused ion beam at an energy of 2 kV and below, which dramatically reduces the damage depth to as low as 1 to 2 nanometers in typical materials, such as silicon.