Hostname: page-component-7479d7b7d-c9gpj Total loading time: 0 Render date: 2024-07-13T05:50:13.424Z Has data issue: false hasContentIssue false

A Novel FIB Method for Preparing Three Dimensional TEM Specimens

Published online by Cambridge University Press:  14 March 2018

Nathan Wang*
Affiliation:
Cypress Semiconductor Corp., San Jose, CA

Extract

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

Presently, there is an increasing demand for multi-view TEM observation of semiconductor device failure locations where the feature size of interest is smaller than the specimen thickness, and where the thin section has other features that may have high Z materials that obscure the site of interest in the TEM. Therefore, different viewing angles are necessary — such as a cross-section view of a defect-containing planar thin specimen. A major obstacle for the preparation of three dimensional specimens of this nature is specimen preparation. Great care must be taken when preparing a thin specimen from an already thin existing TEM specimen.

Type
Research Article
Copyright
Copyright © Microscopy Society of America 2005

References

[1] Mcllwrath, K. and Wang, N., ISTFA 2004, (2004), 320 Google Scholar
[2] Wang, N. and Daniel, Sabbas, Microelectronic Failure Analysis Desk Reference 2002 suppl., ASM international, Materials Park, OH, (2002), pp.2128 Google Scholar
[3] Liu, C.K. et al, ISTFA 2002, (2002), 313 Google Scholar
[4] Yaguchi, T., et al., Microscopy Today, 12 (6), (2004), 26 Google Scholar
[5] Lee, J. C., et al., Microelectronics Reliability 41, (2001), 1551 Google Scholar
[6] Wang, N., et al., Microsc. Microanal. ll(Suppl 2), (2005), 2100.Google Scholar
[7] Irwin, R. B., et al., Microscopy Today, 13(1), (2005), 26 Google Scholar