Hostname: page-component-68945f75b7-9klrw Total loading time: 0 Render date: 2024-08-06T05:32:13.939Z Has data issue: false hasContentIssue false
  • English
  • Français

Effect of Crystal Structure on Hole Carrier Generation in Wide-gap P-type Tin-Niobate

Published online by Cambridge University Press:  10 January 2019

Akane Samizo ,
Naoto Kikuchi  and
Keishi Nishio
Akane Samizo
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, Katsushika, 125-8585, Japan
Naoto Kikuchi*
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, Katsushika, 125-8585, Japan Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8568, Japan
Keishi Nishio
Affiliation:
Department of Materials Science and Technology, Tokyo University of Science, Katsushika, 125-8585, Japan
*
*naoto-kikuchi@aist.go.jp
Get access

Abstract

Sn2Nb2O7 and SnNb2O6 are promising candidates for wide-gap p-type conducting oxides with high mobility, because their valence-band maximum are composed of Sn 5s orbital with large spatial spreading and isotropic nature. Though hole carriers were generated by Sn4+ substitutional defects on Nb5+ site (Sn’Nb) in the substructure of Nb2O6 octahedra in both tin niobates, the generation efficiency of hole carriers in SnNb2O6 was larger than that of Sn2Nb2O7. From the variation in bond length of Nb-O in the Nb2O6 octahedra calculated by Rietveld analysis, the difference in carrier generation efficiency of two tin niobates was examined. The bond length of Nb-O in p-type Sn2Nb2O7 with large amounts of Sn’Nb was smaller than that of n-type Sn2Nb2O7 with small amounts of Sn’Nb. The holes generated by Sn’Nb were considered to be captured by the negative charge of oxygen anions consisting of the Nb2O6 octahedra, resulting in low carrier generation efficiency. In SnNb2O6 showing higher efficiency, Nb-O was 8.6 % larger than that of p-type Sn2Nb2O7. It is considered that the large Nb-O bond length provide the preferred environment for the generation of positive holes, resulting in the higher carrier generation efficiency.

Keywords

x-ray diffraction (XRD)transparent conductordefectselectrical properties
Type
Articles
Information
MRS Advances , Volume 4 , Issue 1: Characterization, Mechanical Properties and Structure-Property Relationships , 2019 , pp. 27 - 32
Copyright
Copyright © Materials Research Society 2019 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Kawazoe, H., Yanagi, H., Ueda, K., and Hosono, H., MRS Bull. 25(8), 28 (2000).CrossRefGoogle Scholar
Wang, Z. , Nayak, P. K. , Caraveo-Frescas, J. A. , and Alshareef, H. N., Adv. Mater. 28, 3831 (2016)CrossRefGoogle ScholarPubMed
Hautier, G., Miglio, A., Ceder, G., Rignanese, G.-M., and Gonze, X., Nat. Commun. 4, 2292 (2013).CrossRefGoogle Scholar
Ogo, Y., Hiramatsu, H., Nomura, K., Yanagi, H., Kamiya, T., Kimura, M., Hirano, M., and Hosono, H., Phys. Status Solidi A, 206, 2187 (2009).CrossRefGoogle Scholar
Bhatia, A., Hautier, G., Nilgianskul, T., Miglio, A., Sun, J., Kim, H. J., Kim, K. H., Chen, S., Rignanese, G-M., Gonze, X., and Suntivich, J., Chem. Mater., 28, 30 (2016)CrossRefGoogle Scholar
Kikuchi, N., Samizo, A., Ikeda, S., Aiura, Y., Mibu, K., and Nishio, K., Phys. Rev. Mater. 1, 021601R (2017).CrossRefGoogle Scholar
Samizo, A., Kikuchi, N., Aiura, Y., Nishio, K., and Mibu, K., Chem. Mater., 30, 8221 (2018)CrossRefGoogle Scholar
Izumi, F. and Momma, K., Solid State Phenom. 130, 15 (2007).CrossRefGoogle Scholar
Katayama, S., Hayashi, H., Kumagai, Y., Oba, F., and Tanaka, I., J. Phys. Chem. C, 120, 9604 (2016).CrossRefGoogle Scholar
Birchall, T., Bouchard, R. J., and Shannon, R. D., Can. J. Chem. 51, 2077 (1973).CrossRefGoogle Scholar
Momma, K., Izumi, F., J. Appl. Crystallogr., 44, 1272 (2011).CrossRefGoogle Scholar
Stewart, D. J., Knop, O., Meads, R. E., and Parker, W. G., Can. J. Chem. 51, 1041 (1973)CrossRefGoogle Scholar
Birchall, T. and Sleight, A. W., J. Solid. State. Chem. 13, 118 (1975)CrossRefGoogle Scholar
Cerny, P., Fransolet, A-M., Ercit, T. S., and Chapman, R., Can. Mineral. 26, 889 (1988)Google Scholar
Ren, J., Ouyang, S., Chen, H., Umezawa, N, Lu, D., Wang, D., Xu, H. and Ye, J., Appl. Catal. B environ. , 168-169, 243 (2015)CrossRefGoogle Scholar
Aiura, Y., Ozawa, K., Hase, I., Bando, K., Haga, H., Kawanaka, H., Samizo, A., Kikuchi, N., and Mase, K., J. Phys. Chem. C, 121, 9480 (2017).CrossRefGoogle Scholar