Hostname: page-component-84b7d79bbc-2l2gl Total loading time: 0 Render date: 2024-07-26T08:16:51.615Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical properties of solution processed layers based on Ge-Si alloy nanoparticles

Published online by Cambridge University Press:  11 May 2016

Zeynep Meric ,
Christian Mehringer ,
Michael. P. M. Jank ,
Wolfgang Peukert  and
Lothar Frey
Zeynep Meric*
Affiliation:
Chair of Electron Devices, University of Erlangen-Nürnberg, Erlangen, 91058, Germany
Christian Mehringer
Affiliation:
Institute of Particle Technology, University of Erlangen-Nürnberg, Erlangen, 91058, Germany
Michael. P. M. Jank
Affiliation:
Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, 91058, Germany
Wolfgang Peukert
Affiliation:
Institute of Particle Technology, University of Erlangen-Nürnberg, Erlangen, 91058, Germany
Lothar Frey
Affiliation:
Chair of Electron Devices, University of Erlangen-Nürnberg, Erlangen, 91058, Germany Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, 91058, Germany
*
*(Email: Zeynep.Meric@leb.eei.uni-erlangen.de)
Get access

Abstract

Ge-Si alloy nanoparticles (NPs) covering the full range of compositions were studied in regard to their suitability as semiconducting channel layer in thin-film transistors (TFTs). Special focus is given to the influence of annealing and encapsulation techniques on the contact and channel properties. Therefore, electrical characterization methods separating contact from channel characteristics are highlighted and applied. It is demonstrated that appropriate passivation of the nanoparticle surfaces can improve the Ion/Ioff ratios by modulation of the density of free charge carriers and also can suppress hysteresis effects. Ge-rich NP alloys can generally be passivated more effectively regardless if passivation is done with solution-processed poly(methyl methacrylate) (PMMA) or by aluminum oxide (Al2O3) from Atomic Layer Deposition (ALD). Sufficient annealing improves the contact formation between aluminum electrodes and Ge-Si particles by modification of charge injection. The presented analysis leads to a better understanding interface and surface effects in porous nanoparticle semiconductors for application in TFT devices.

Keywords

thin filmnanostructurepassivation
Type
Articles
Information
MRS Advances , Volume 1 , Issue 33: Nanotechnology , 2016 , pp. 2331 - 2336
Copyright
Copyright © Materials Research Society 2016 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Talapin, D. V., Murray, C. B., Science, 310 (5745), 86–89, (2005).CrossRefGoogle Scholar
Weis, S., Körmer, R., Jank, M. P. M., Lemberger, M., Otto, M., Ryssel, H., Peukert, W., Frey, L., Small, 7 (20), 2853–2857, (2011).CrossRefGoogle Scholar
Meric, Z., Mehringer, C., Karpstein, N., Jank, M. P. M., Peukert, W., Frey, L., Phys. Chem. Chem. Phys., 17 (34), 22106–22114, (2015).CrossRefGoogle Scholar
Mehringer, C., Kloner, C., Butz, B., Winter, B., Spiecker, E., Peukert, W., Nanoscale, 7 (12), 5186–5196, (2015).CrossRefGoogle Scholar
Rose, A., Phys. Rev., 97 (6), 1538–1544, (1955).CrossRefGoogle Scholar