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Fabrication and Characterization of Multiferroic Al0.5Fe1.5O3 Epitaxial Thin Films

Published online by Cambridge University Press:  19 February 2019

Badari Narayana Aroor Rao ,
Shintaro Yasui ,
Tsukasa Katayama  and
Mitsuru Itoh
Badari Narayana Aroor Rao*
Affiliation:
Laboratory for Materials and Structures, Tokyo Institute of Technology, Japan
Shintaro Yasui
Affiliation:
Laboratory for Materials and Structures, Tokyo Institute of Technology, Japan
Tsukasa Katayama
Affiliation:
Department of Chemistry, The University of Tokyo, Japan
Mitsuru Itoh
Affiliation:
Laboratory for Materials and Structures, Tokyo Institute of Technology, Japan
*
*(Email: rao.b.aa@m.titech.ac.jp)
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Abstract

Single-phase multiferroic materials have attracted considerable attention among scientists, due to the strong drive in industry towards device miniaturization, addition of new functionalities, etc. Currently, most of the discovered materials have at-least one ferroic order active only at low temperatures, thereby hindering their induction into practical devices. κ-Al2O3-type AlxFe2-xO3 (x-AFO) oxides belong to a new class of metastable multiferroic compounds (space group: Pna21), with relatively high Curie temperatures. The current work investigates the effect of thin film deposition conditions on the ferroelectric and ferrimagnetic properties of Al0.5Fe1.5O3 (0.5-AFO). Substrate temperature and oxygen partial pressure during deposition were found to be the critical parameters in obtaining high quality films. Optimizing the deposition conditions of 0.5-AFO enabled observation of both ferroelectricity and ferrimagnetism at room temperature.

Keywords

ferroelectricferromagneticthin filmlaser ablationfunctional
Type
Articles
Information
MRS Advances , Volume 4 , Issue 9: Electronic, Photonic and Magnetic Materials , 2019 , pp. 539 - 544
Copyright
Copyright © Materials Research Society 2019 

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