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Ohmic contact formation to heavily boron-doped p+ diamond prepared by hot-filament chemical vapor deposition

Published online by Cambridge University Press:  20 June 2016

Shinya Ohmagari ,
Takeshi Matsumoto ,
Hitoshi Umezawa  and
Yoshiaki Mokuno
Shinya Ohmagari*
Affiliation:
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan.
Takeshi Matsumoto
Affiliation:
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan.
Hitoshi Umezawa
Affiliation:
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan.
Yoshiaki Mokuno
Affiliation:
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan.
*
*(Email: shinya.ohmagari@aist.go.jp)
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Abstract

Diamond-based rectifiers are promising devices for the development of next-generation power electronics. However, presented device structures limit current operation as low as tens A, which hampers diamond from real industrial applications. One of the critical issues is poor availability of conductive (low-resistivity) substrates which can be used for vertical-type devices for high-output operations. Recently, we have successfully fabricated heavily boron-doped (p+) low-resistivity diamond by hot-filament chemical vapor deposition (HFCVD). Resistivity was monotonically decreased to 1.2 mΩcm with amount of doped boron. In this study, to further investigate potentials for electric applications, contact resistance between metal/p+ diamond was evaluated by transmission line model (TLM). From the current-voltage characteristics, low specific contact resistance of ∼10−7 Ωcm2 was demonstrated.

Keywords

chemical vapor deposition (CVD) (deposition)diamondelectrical properties
Type
Articles
Information
MRS Advances , Volume 1 , Issue 51: Electronics and Photonics , 2016 , pp. 3489 - 3495
Copyright
Copyright © Materials Research Society 2016 

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