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Tin Disulfide-Oxide (SnS2-xOx) as n-type Heterojunction Layer Processed by Chemical Bath Technique for Cd Free Fabrication of Compound Semiconductor Thin Film Solar Cells
Published online by Cambridge University Press: 10 July 2018
Abstract
The chemical bath deposition of wide bandgap n-type SnS2 films and role of sulphur precursor in suppression of p-type SnS phase is described. The as-deposited films are highly polycrystalline in hexagonal crystal structure. Inclusion of oxygen in the film phase is shown by the x-ray photoelectron spectroscopy (XPS) and Raman scattering methods which suggests the CBD films are better described as tin disulfide-oxide (SnS2-xOx) x=0.1. A possible mechanism of film formation is presented. Optical analysis showed energy bandgap 2.76 eV for SnS2-xOx film which decreases to 2.62 eV with the inclusion of the secondary SnS phases.
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- Copyright © Materials Research Society 2018
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