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Vanadium Oxide Based RRAM Device

Published online by Cambridge University Press:  21 June 2017

Zhenni Wan ,
Robert B. Darling  and
M. P. Anantram
Zhenni Wan*
Affiliation:
Department of Electrical Engineering, University of Washington, Seattle, WA, 98105, USA.
Robert B. Darling
Affiliation:
Department of Electrical Engineering, University of Washington, Seattle, WA, 98105, USA.
M. P. Anantram
Affiliation:
Department of Electrical Engineering, University of Washington, Seattle, WA, 98105, USA.
*
*(Email: jennywan@uw.edu)
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Abstract

Forming-free bipolar resistive switching characteristics in a Vanadium oxide based sandwich structure is observed for the first time. The bottom conducting layer is the common ground electrode for all devices. The top conducting layer acts as an active element with an additional Cr/Al/Cr electrode patterned on its top for making contact. Different from the typical metal/transition metal oxide/metal sandwich structure based resistive memories, our device exhibits a low resistance state (LRS) in its virgin state, and can be switched to a high resistance state (HRS) when a positive bias of +2.5V is applied to the top electrode. Following this, the device can be reset to a LRS when a negative bias of approximately 2.5V is applied. A significant decrease of switching voltages is observed when the diameter of the top contact decreases, indicating an electric field enhanced switching mechanism. Simulation using TCAD confirms that electric field beneath the top metal contact increases due to fringing. The results suggest future applications in low power integrated non-volatile memories.

Keywords

memoryoxidesimulation
Type
Articles
Information
MRS Advances , Volume 2 , Issue 52: Electronic Devices and Materials , 2017 , pp. 3019 - 3024
Copyright
Copyright © Materials Research Society 2017 

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References

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