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Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

Published online by Cambridge University Press:  14 July 2016

V. Vasilyev ,
J. Cetnar ,
B. Claflin ,
G. Grzybowski ,
K. Leedy ,
N. Limberopoulos ,
D. Look  and
S. Tetlak
V. Vasilyev*
Affiliation:
Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH
J. Cetnar
Affiliation:
Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH
B. Claflin
Affiliation:
Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH
G. Grzybowski
Affiliation:
Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH
K. Leedy
Affiliation:
Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH
N. Limberopoulos
Affiliation:
Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH
D. Look
Affiliation:
Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH
S. Tetlak
Affiliation:
Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH
*
*(Email: vladimir.vasilyev@wpafb.af.mil)
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Abstract

AlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.

In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-x Alx N thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Keywords

thin filmsensornitride
Type
Articles
Information
MRS Advances , Volume 1 , Issue 39: Materials Design , 2016 , pp. 2711 - 2716
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Wu, Y.-R., IEEE Transactions, 52 (2), 284 (2005).CrossRefGoogle Scholar
Fufligin, V., Salley, E., Osinsky, A., and Norris, P., Appl. Phys. Lett. 77, 3075 (2000).Google Scholar
Crisman, E., Derov, J., Drehman, A., at al., J. Solid-State Lett. 8 (3), H31 (2005).Google Scholar
Crisman, E., Vasilyev, V., Drehman, A., and Webster, R., MRS Proceedings, 1288 © 2011.Google Scholar
Crisman, E., Drehman, A., Miller, R., Osinsky, A., at al., Phys. Stat. Sol. C 11, 517 (2014).Google Scholar
Stan, G., Botea, M., Boni, G., Pintilie, I., and Pintilie, L., Appl. Surf. Sci. 353, 1195 (2015).CrossRefGoogle Scholar
Kim, H., Ju, B., Lee, Y., Lee, S., Lee, J., at al., Sensors and Actuators A. 89, 255 (2001).Google Scholar
Akiyama, M., Kamohoara, T., Kano, K., Teshigahara, A., at al., Adv. Mater. 21, 593 (2009).CrossRefGoogle Scholar
Lee, M., Guo, R. and Bhalla, A., J. of Electroceramics. 2(4), 229 (1998).Google Scholar
Tasnádi, F., Alling, B., Hӧglund, C., at al., Phys. Rev. Lett., 104, 137601 (2010).Google Scholar
Mozzi, R., Parry, G., Jeffrey, G., J. of Chem. Phys., 23, 406 (1955).Google Scholar
Moulder, F. et al. , Handbook of X-Ray Photoelectron Spectroscopy, Perkin-Elmer Co., Eden Prairie, MN (1992).Google Scholar
Daglish, M., Integrated Ferroelectrics, 22, 473 (1998).CrossRefGoogle Scholar
Farrer, N. and Bellaiche, L., Phys. Rev. B 66, 201203 (R) (2002).Google Scholar
Hӧglund, C., Birch, J., Alling, B., Bareńo, J., at al., J. Appl. Phys. 107, 123515 (2010).CrossRefGoogle Scholar
Hӧglund, C., Bareńo, J., Birch, J., Alling, B., at al., J. Appl. Phys. 105, 113517 (2009).CrossRefGoogle Scholar
Vollstädt, H., Ito, E., Akaishi, M., Akimoto, S., at al., Proc. Japan. Acad. B, 66, 7 (1990).CrossRefGoogle Scholar
Miller, R. and Osinsky, A., Agnitron Tech., “Pyroelectric Properties of AlN Films”, White Paper for AFRL (2013).Google Scholar
Shaldin, Yu. and Matyjasik, S., Semiconductors. 45(9), 1117 (2011).Google Scholar
Lang, S., Physics Today. 1(8), 31 (2005).Google Scholar