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Characterization of Electronic Properties of Two-dimensional Refractory Selenides and Tellurides

Published online by Cambridge University Press:  20 July 2016

Chandan Biswas ,
Gustavo A. Lara Saenz ,
Dalal Fadil  and
Anupama B. Kaul
Chandan Biswas
Affiliation:
Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, TX 79968, USA Department of Electrical & Computer Engineering, University of Texas at El Paso, TX 79968, USA
Gustavo A. Lara Saenz
Affiliation:
Department of Electrical & Computer Engineering, University of Texas at El Paso, TX 79968, USA
Dalal Fadil
Affiliation:
Department of Electrical & Computer Engineering, University of Texas at El Paso, TX 79968, USA
Anupama B. Kaul*
Affiliation:
Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, TX 79968, USA Department of Electrical & Computer Engineering, University of Texas at El Paso, TX 79968, USA
*
*Email: akaul@utep.edu
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Abstract

Transition metal dichalcogenides (TMDs) are emerging among the potential alternatives to graphene. The monolayer of TMDs can easily be exfoliated mechanically and their electronic properties can also be tuned by controlling the number of layers. TMDs possess an advantage over graphene by controlling band gap magnitude appropriate for the electronic and optoelectronic applications. Here we show, mechanically exfoliated TMDs such as NbSe2 and MoTe2 exhibit metallic and fluctuating conductance behavior respectively. Metallic conduction in NbSe2 was investigated under atmospheric conditions and compered with vacuum conditions. Furthermore, NbSe2 resistance was measured at low temperature up to 5.6 K. The above electronic investigations clearly demonstrate ohmic and fluctuating conduction in NbSe2 and MoTe2 respectively which could be applicable for electronic and optoelectronic devices.

Keywords

deviceselectrical propertiesnanoscale
Type
Articles
Information
MRS Advances , Volume 1 , Issue 47: Electronics and Photonics , 2016 , pp. 3229 - 3234
Copyright
Copyright © Materials Research Society 2016 

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References

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