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Current Status of the Quality of 4H-SiC Substrates and Epilayers forPower Device Applications

Published online by Cambridge University Press:  26 January 2016

M. Dudley ,
H. Wang ,
Jianqiu Guo ,
Yu Yang ,
Balaji Raghothamachar ,
J. Zhang ,
B. Thomas ,
G. Chung ,
E. K. Sanchez  and
D. Hansen
...Show all authors
M. Dudley*
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook NY 11794-2275, U.S.A.
H. Wang
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook NY 11794-2275, U.S.A.
Jianqiu Guo
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook NY 11794-2275, U.S.A.
Yu Yang
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook NY 11794-2275, U.S.A.
Balaji Raghothamachar
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook NY 11794-2275, U.S.A.
J. Zhang
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686
B. Thomas
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686
G. Chung
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686
E. K. Sanchez
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686
D. Hansen
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686
S. G. Mueller
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, USA 48686
*
*(Email: michael.dudley@stonybrook.edu)
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Abstract

Interfacial dislocations (IDs) and half-loop arrays (HLAs) present in theepilayers of 4H-SiC crystal are known to have a deleterious effect on deviceperformance. Synchrotron X-ray Topography studies carried out on n-type 4H-SiCoffcut wafers before and after epitaxial growth show that in many cases BPDsegments in the substrate are responsible for creating IDs and HLAs during CVDgrowth. This paper reviews the behaviors of BPDs in the substrate during theepitaxial growth in different cases: (1) screw-oriented BPD segmentsintersecting the surface replicate directly through the interface during theepitaxial growth and take part in stress relaxation process by creating IDs andHLAs (Matthews-Blakeslee model [1] ); (2) non-screw oriented BPD half loopintersecting the surface glides towards and replicates through the interface,while the intersection points convert to threading edge dislocations (TEDs) andpin the half loop, leaving straight screw segments in the epilayer and thencreate IDs and HLAs; (3) edge oriented short BPD segments well below the surfaceget dragged towards the interface during epitaxial growth, leaving two longscrew segments in their wake, some of which replicate through the interface andcreate IDs and HLAs. The driving force for the BPDs to glide toward theinterface is thermal stress and driving force for the relaxation process tooccur is the lattice parameter difference at growth temperature which resultsfrom the doping concentration difference between the substrate and epilayer.

Keywords

dislocationscrystal growthx-ray diffraction (XRD)
Type
Articles
Information
MRS Advances , Volume 1 , Issue 2: Energy and Sustainability , 2016 , pp. 91 - 102
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Matthews, J. and Blakeslee, A., Journal of Crystal Growth 27, 118 (1974).Google Scholar
Jacobson, H., Bergman, J., Hallin, C., Janzén, E., Tuomi, T., and Lendenmann, H., Journal of applied physics 95 (3), 1485 (2004).Google Scholar
Ha, S., Skowronski, M., and Lendenmann, H., Journal of applied physics 96 (1), 393 (2004).Google Scholar
Stahlbush, R., Fatemi, M., Fedison, J., Arthur, S., Rowland, L., and Wang, S., Journal of electronic materials 31 (5), 370 (2002).Google Scholar
Zhang, Z., Moulton, E., and Sudarshan, T.S., Applied Physics Letters 89 (8), 081910 (2006).Google Scholar
Zhang, Z. and Sudarshan, T., Applied Physics Letters 87 (15), 151913 (2005).Google Scholar
VanMil, B.L., Stahlbush, R.E., Myers-Ward, R.L., Lew, K.K., Eddy, C.R., and Gaskill, D.K., Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 26 (4), 1504 (2008).Google Scholar
Myers-Ward, R.L., VanMil, B. L., Stahlbush, R.E., Katz, S.L., McCrate, J.M., Kitt, S.A., Eddy, C.R., Gaskill, D.K., Mater. Sci. Forum 615-617, 105 (2009).CrossRefGoogle Scholar
Stahlbush, R.E., Vanmill, B.L., Gaskill, D.K., Eddy, C.R. Jr., Mater. Sci. Forum 645-648, 271–276 (2010).Google Scholar
Jacobson, H., Birch, J., Hallin, C., Henry, A., Yakimova, R., Tuomi, T., Janzén, E., and Lindefelt, U., Applied Physics Letters 82 (21), 3689 (2003).Google Scholar
Zhang, X., Ha, S., Hanlumnyang, Y., Chou, C.H., Rodriguez, V., Skowronski, M., Sumakeris, J.J., Paisley, M.J., and O’Loughlin, M.J., Journal of Applied Physics 101 (5), 053517 (2007).Google Scholar
Zhang, N., Chen, Y., Zhang, Y., Dudley, M., and Stahlbush, R.E., Applied Physics Letters 94 (12), 122108 (2009).Google Scholar
Wang, H., Wu, F., Dudley, M., Raghothamachar, B., Chung, G., Zhang, J., Thomas, B., Sanchez, E.K., Mueller, S.G., Hansen, D., and Loboda, M., Materials Science Forum 778-780, 328 (2014).Google Scholar
Sasaki, S., Suda, J., and Kimoto, T., Materials Science Forum 717-720, 481 (2012).CrossRefGoogle Scholar
Zhang, X., Skowronski, M., Liu, K.X., Stahlbush, R.E., Sumakeris, J.J., Paisley, M.J., and O’Loughlin, M.J., Journal of Applied Physics 102 (9), 093520 (2007).Google Scholar
Zhang, X., Miyazawa, T., and Tsuchida, H., Materials Science Forum 717-720, 313 (2012).Google Scholar
Huang, X.R., Black, D.R., Macrander, A.T., Maj, J., Chen, Y., and Dudley, M., Applied Physics Letters 91 (23), 231903 (2007).Google Scholar
Wang, H.H., Wu, F.Z., Dudley, M., Raghothamachar, B., Chung, G., Zhang, J., Thomas, B., Sanchez, E.K., Mueller, S.G., and Hansen, D.M., Materials Science Forum, 778-780, 328 (2014).Google Scholar
Dudley, M., Zhang, N., Zhang, Y., Raghothamachar, B., and Sanchez, E.K., Materials Science Forum 645-648, 295 (2010).CrossRefGoogle Scholar