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Epitaxial GdN/SmN-based superlattices grown by molecular beam epitaxy

Published online by Cambridge University Press:  07 February 2017

Franck Natali
Affiliation:
The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington 6140, New Zealand
Joe Trodahl*
Affiliation:
The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington 6140, New Zealand
Stéphane Vézian
Affiliation:
Université Côte d’Azur, Centre de Recherche sur l’Hétéro Épitaxie et ses Applications (CRHEA), Centre National de la recherche Scientifique (CNRS), France
Antoine Traverson
Affiliation:
The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington 6140, New Zealand
Benjamin Damilano
Affiliation:
Université Côte d’Azur, Centre de Recherche sur l’Hétéro Épitaxie et ses Applications (CRHEA), Centre National de la recherche Scientifique (CNRS), France
Ben Ruck
Affiliation:
The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington 6140, New Zealand
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Abstract

GdN/SmN based superlattices have been grown by molecular beam epitaxy. In-situ reflection high energy electron diffraction was used to evaluate the evolution of the epitaxial growth and the structural properties were assessed by ex-situ X-ray diffraction. Hall Effect and resistivity measurements as a function of the temperature establish that the superlattices are heavily n-type doped semiconductors and the electrical conduction resides in both REN layers, SmN and GdN.

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Articles
Copyright
Copyright © Materials Research Society 2017 

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References

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