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High aspect ratio germanium nanowires obtained by dry etching

Published online by Cambridge University Press:  24 February 2016

Kevin Guilloy ,
Nicolas Pauc ,
Alban Gassenq  and
Vincent Calvo
Kevin Guilloy*
Affiliation:
Université Grenoble Alpes, INAC-SP2M, SiNaPS, F-38000 Grenoble, France CEA, INAC-SP2M, SiNaPS, F-38000 Grenoble, France
Nicolas Pauc
Affiliation:
Université Grenoble Alpes, INAC-SP2M, SiNaPS, F-38000 Grenoble, France CEA, INAC-SP2M, SiNaPS, F-38000 Grenoble, France
Alban Gassenq
Affiliation:
Université Grenoble Alpes, INAC-SP2M, SiNaPS, F-38000 Grenoble, France CEA, INAC-SP2M, SiNaPS, F-38000 Grenoble, France
Vincent Calvo
Affiliation:
Université Grenoble Alpes, INAC-SP2M, SiNaPS, F-38000 Grenoble, France CEA, INAC-SP2M, SiNaPS, F-38000 Grenoble, France
*
*(Email: kevin.guilloy@cea.fr)
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Abstract

We present here a reactive ion etching recipe to fabricate germanium nanowires. We used a combination of Cl2, N2 and O2 and studied the influence of both the gas pressure and the O2 mass flow on the morphology of the nanowires. 5 µm long nanowires with an aspect ratio of 20 are demonstrated with smooth surfaces and a tapering below 20 nm/µm. We also show that both gold and aluminum can be used as hard mask; the latter achieving a selectivity with germanium above 100.

Keywords

reactive ion etchingnanostructureGe
Type
Articles
Information
MRS Advances , Volume 1 , Issue 13: Nanomaterials and Synthesis , 2016 , pp. 875 - 880
Copyright
Copyright © Materials Research Society 2016 

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References

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