Hostname: page-component-7479d7b7d-fwgfc Total loading time: 0 Render date: 2024-07-13T00:16:34.499Z Has data issue: false hasContentIssue false
  • English
  • Français

Stability Analysis of All-Inkjet-Printed Organic Thin-Film Transistors

Published online by Cambridge University Press:  10 January 2018

Chen Jiang ,
Hanbin Ma  and
Arokia Nathan
Chen Jiang*
Affiliation:
Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
Hanbin Ma
Affiliation:
Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
Arokia Nathan
Affiliation:
Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
*
*(Email: cj360@cam.ac.uk)
Get access

Abstract:

All-inkjet-printed organic thin-film transistors take advantage of low-cost fabrication and high compatibility to large-area manufacturing, making them potential candidates for flexible, wearable electronics. However, in real-world applications, device instability is an obstacle, and thus, understanding the factors that cause instability becomes compelling. In this work, all-inkjet-printed low-voltage organic thin-film transistors were fabricated and their stability was investigated. The devices demonstrate low operating voltage (<3 V), small subthreshold slope (128 mV/decade), good mobility (0.1 cm2 V−1 s−1), close-to-zero threshold voltage (−0.16 V), and high on/off ratio (>105). Several aspects of stability were investigated, including mechanical bending, shelf life, and bias stress. Based on these tests, we find that water molecule polarization in dielectrics is the main factor causing instability. Our study suggests use of a printable water-resistant dielectric for stability enhancement for the future development of all-inkjet-printed organic thin-film transistors.

Keywords

organicthin filmelectrical properties
Type
Articles
Information
MRS Advances , Volume 3 , Issue 33: Electronics, Magnetics and Photonics , 2018 , pp. 1871 - 1876
Check for updates
Copyright
Copyright © Materials Research Society 2018 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Street, R. A., Adv. Mater. 21, 2007 (2009).Google Scholar
Klauk, H., Chem. Soc. Rev. 39, 2643 (2010).CrossRefGoogle Scholar
Kaltenbrunner, M., Sekitani, T., Reeder, J., Yokota, T., Kuribara, K., Tokuhara, T., Drack, M., Schwödiauer, R., Graz, I., Bauer-Gogonea, S., Bauer, S., and Someya, T., Nature 499, 458 (2013).CrossRefGoogle Scholar
Guo, Y., Yu, G., and Liu, Y., Adv. Mater. 22, 4427 (2010).CrossRefGoogle Scholar
Subramanian, V., Fréchet, J.M.J., Chang, P.C., Member, S., Huang, D.C., Lee, J.B., Member, S., Molesa, S.E., Member, S., Murphy, A.R., Redinger, D.R., Member, S., and Volkman, S.K., Proc. IEEE 93, 1330 (2005).Google Scholar
Lin, P. and Yan, F., Adv. Mater. 24, 34 (2012).Google Scholar
Tee, B.C.-K., Chortos, A., Berndt, A., Nguyen, A. K., Tom, A., McGuire, A., Lin, Z.C., Tien, K., Bae, W.-G., Wang, H., Mei, P., Chou, H.-H., Cui, B., Deisseroth, K., Ng, T.N., and Bao, Z., Science, 350, 313 (2015).Google Scholar
Feng, L., Jiang, C., Ma, H., Guo, X., and Nathan, A., Org. Electron. 38, 186 (2016).Google Scholar
Sirringhaus, H., Adv. Mater. 21, 3859 (2009).CrossRefGoogle Scholar
Feng, L., Tang, W., Zhao, J., Yang, R., Hu, W., Li, Q., Wang, R., and Guo, X., Sci. Rep. 6, 20671 (2016).CrossRefGoogle Scholar
Jiang, C., Ma, H., Hasko, D.G., Nathan, A., Adv. Electron. Mater. 3, 201700029 (2017).Google Scholar