Abnormal Oxidation of TiSi2 in Gate Stacks Found at 750–850°C

Cora Lind

doi:10.1557/mrs2000.209

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Abnormal Oxidation of TiSi2 in Gate Stacks Found at 750–850°C

Published online by Cambridge University Press: 31 January 2011

Cora Lind

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Type: Research/Researchers
Information: MRS Bulletin , Volume 25 , Issue 11: Molecule-Based Magnets , November 2000 , pp. 10

DOI: https://doi.org/10.1557/mrs2000.209 [Opens in a new window]
Copyright: Copyright © Materials Research Society 2000

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Abnormal Oxidation of TiSi2 in Gate Stacks Found at 750–850°C

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