Hostname: page-component-6d856f89d9-jhxnr Total loading time: 0 Render date: 2024-07-16T06:37:14.611Z Has data issue: false hasContentIssue false

High Tc Superconducting Thin Films

Published online by Cambridge University Press:  29 November 2013

Get access

Extract

While high Tc superconductivity was first discovered in bulk material, it was apparent that thin films of these materials, particularly the compound YBa2Cu3O7-δ, would be of great interest to both science and technology. In this sense the development of these materials parallels a similar history in the low Tc materials. Initially, most of the low Tc materials of interest were single element metals such as Nb, Pb and Al in bulk form. Later work, mostly in magnets, led to the development of compounds or alloys of such metals as Nb-Sn, Nb-Ti, and many others. However, many physical and technological investigations required thin films with thicknesses in the range of 0.1-10μm. Microwave, infrared, and critical current studies are examples of some of the scientific uses of thin films. A few examples of the applications would include josephson junction-based digital computer circuits, SQUID (Superconducting Quantum Interference Devices), transmission lines, and interconnects and rf mixers. These studies are also of great interest in the high Tc materials. It is readily apparent that scientific and technological developments in superconductivity are closely interwoven.

The high level of interest in thin films can be appreciated by observing that it was barely a few months after the announcement of superconductivity above 77 K that the first films of these complex, multi-element materials, superconducting at about 86 K were announced. These early efforts at thin film fabrication were generally accomplished using multi-element deposition techniques but subsequent development has seen many varieties of film fabrication techniques used quite successfully to fabricate high-quality films.

Type
High Tc Superconductors
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Bednorz, J.G. and Müller, K.A., Z. Phys. B 64 (1986) p. 189; J.G. Bednorz, M. Takashige, and K.A. Müller, Europhys. Lett. 3 (1987) p. 379.CrossRefGoogle Scholar
2.Chu, C.W., Hor, P.H., Meng, R.L., Gao, L., Huang, Z.J., Wang, Y.Q., Bechtold, J., Campbell, D., Wu, M.K., Ashburn, J., and Huang, C.Y., Phys. Rev. Lett. 58 (1987) p. 405.CrossRefGoogle Scholar
3.Laibowitz, R.B., Koch, R.H., Chaudhari, P., and Gambino, R.J., Phys. Rev. B 35 (1987) p. 8821.CrossRefGoogle Scholar
4.Oh, B., Naito, M., Arnason, S., Rosenthal, P., Barton, R., Beasley, M.R., Geballe, T.H., Hammond, R.H., and Kapitulnik, A., Appl. Phys. Lett. 51 (1987) p. 852.CrossRefGoogle Scholar
5.Mankiewich, P.K., Schofield, J.H., Skocpol, W.J., Howard, R.E., Dayem, A.H., and Good, E., Appl. Phys. Lett. 51 (1987) p. 1753.CrossRefGoogle Scholar
6.Sandstrom, R.L., Gallagher, W.J., Dinger, T.R., Laibowitz, R.B., and Gambino, R.J., Appl. Phys. Lett. 53 (1988) p. 44.Google Scholar
7.Scheuermann, M.R., Chi, C.C., Tsuei, C.C., Yee, D.S., Cuomo, J.J., Laibowitz, R.B., Koch, R.H., Braren, B., Srinivasen, R., and Plechaty, M.M., Appl. Phys. helt. 51 (1987) p. 1951.Google Scholar
8.Enomoto, Y., Murakami, T., Suzuki, M., and Morwaki, K., Jap. J. Appl. Phys. 26 (1987) p. L1266.CrossRefGoogle Scholar
9.Hellman, E.S., Schlom, D.G., Missert, N., Char, K., Harris, J.S. Jr., Beasley, M.R., Kapitulnik, A., Geballe, T.H., Eckstein, J.N., Weng, S-L., and Webb, C., J. Vac. Sci. and Technol. B6 (1988) p. 799; M. Hong, J. Kwo, C.H. Chen, R.M. Fleming, S.H. Liou, M.E. Gross, B.A. Davidson, H.S. Chen, S. Nakahara, and T. Boone, AIP Conf. Proc. 165 (1988) p. 12.CrossRefGoogle Scholar
10.Dijikkamp, D., Venkatesan, T., Wu, X.D., Shaheen, S.A., Jisrawi, N., Min-Lee, Y.H., McLean, W.L., and Croft, M., Appl. Phys. Lett. 51 (1987) p. 619.CrossRefGoogle Scholar
11.Gupta, A., Jagannathan, R., Cooper, E.I., Giess, E.A., Landman, J.I., and Hussey, B.W., Appl. Phys. Lett. 52 (1988).Google Scholar
12.Braginski, A.I., Talvacchio, J., Gavaler, J.R., Forrester, M.G., and Janocko, M.A., to appear in SPIE Proceedings Vol. 948, High-Tc Superconductivity: Thin Films and Devices, edited by van Dover, R.B. and Chi, C.C. (SPIE, Bellingham, Washington, 1988).Google Scholar
13.Maddakson, P., Cuomo, J.J., Yee, D.S., Roy, R.A., and Scilla, G., J. Appl. Phys. 63 (1988) p. 2046.CrossRefGoogle Scholar
14.Bagley, B.G., Greene, L.H., Barboux, P., Tarascon, J-M., Venkatesan, T., Chase, E.W., Chan, Siu-Wau, Feldman, W.L., Wilkins, B.J., Khan, S.A., Giroud, M., Proc. ISS88, Nagoya, Japan, July 1988.Google Scholar
15.Sandstrom, R.L., Gallagher, W.J., Dinger, T.R., Koch, R.H., Laibowitz, R.B., Kleinsasser, A.W., and Gambino, R.J., Appl. Phys. Lett. 53 (1988) p. 444.CrossRefGoogle Scholar
16.Chaudhari, P., Koch, R.H., Laibowitz, R.B., McGuire, T.R., and Gambino, R.J., Phys. Rev. Lett. 58 (1987) p. 2684.CrossRefGoogle Scholar
17.Koch, R.H., Umbach, C.P., Clark, G.J., Chaudhari, P., and Laibowitz, R.B., Appl. Phys. Lett. 51 (1987) p. 200; R.H. Koch, et al., Physica C 153-155 (1988) p. 1685.CrossRefGoogle Scholar
18.Clark, G.J., Marwick, A.D., Koch, R.H., and Laibowitz, R.B., Appl. Phys. Lett. 51 (1987) p. 139.CrossRefGoogle Scholar
19.Laibowitz, R.B., AIP Conf. Proc. 165 (1988) p. 2.CrossRefGoogle Scholar
20.Lathrup, P.K., Russek, S.E., and Buhrman, R.A., Appl. Phys. Lett. 51 (1987) p. 1554; H. Adachi, K. Hirochi, K. Setsune, M. Kitabatake, and K. Wasa, Appl. Phys.. Lett. 51 (1987) p. 2263; X.D. Wu, A. Inam, T. Venkatesan, C.C. Chang, E.W. Chase, P. Barboux, J.M. Tarascon, and B. Wilkens, Appl. Phys. Lett. 52, (1988) p. 754; S. Witanachchi, H. S. Kwok, X. W. Wang, and D. T. Shaw, Appl Phys. Lett. 53 (1988) p. 234; see also Ref. 12.CrossRefGoogle Scholar
21.Bando, Y., Terashima, T., Iijima, K., Yamamoto, K., Hirata, K., and Mazaki, H., 5th International Workshop on Future Electron Devices — High Temperature Superconducting Electron Devices — (FET HiTcSc-ED Workshop) June 2-4, 1988, Miyagi-Zao, pp. 1116 (1988); T. Venkatesan, X.D. Wu, B. Dutta, A. Inam, M.S. Hegde, D.M. Hwang, C.C. Chang, L. Nazar, and B. Wilkens, preprint.Google Scholar
22.Lee, W.Y., Lee, V.Y., Salem, J., Huang, T.C., Savoy, R., Bullock, D.C., Parkin, S.S.P., Appl. Phys. Lett. 53 (1988) p. 329.CrossRefGoogle Scholar
23.Sandstrom, R.L., Giess, E.A., Gallagher, W.J., Segmuller, A., Cooper, E.I., Chisholm, M.S., Gupta, A., Shinde, S., and Laibowitz, R.B., Appl. Phys. Lett., to be published November 14, 1988.Google Scholar
24.Tanaka, S. and Itozaki, H., Jpn. J. of Appl. Phys. 27 (1988) p. L622; H. Itozaki, H. Higaki, K. Harada, S. Tanaka, N. Fujimori, and S. Yazu, Proc. 1st International Symposium on Superconductivity, Nagoya, Japan, August 28-31, 1988; Y Ichikawa, H. Adachi, K. Setsune, S. Hatta, K. Hirochi, and K. Wasa, Appl. Phys. Lett. 51 (1987) p. 2263.CrossRefGoogle Scholar
25.Chaudhari, P., Collins, R.J., Freitas, P., Gambino, R., Kirtley, J., Koch, R., Laibowitz, R., Legoues, F., McGuire, T., Penney, T., Schlesinger, A., Segmuller, A., Foner, S., and McNiff, E.J., Phys. Rev. B 36 (1987) p. 8903.CrossRefGoogle Scholar
26.Plechaty, M.M., Olsen, B.L., and Scilla, G., unpublished results.Google Scholar
27.Char, K., Lee, Mark, Barton, R.W., Marshall, A.F., Bozovic, I., Hammond, R.H., Beasley, M.R., Gebaile, T.H., Kapitulnik, A., and Laderman, S.S., Phys. Rev. B 38 (1988) p. 834; see also Ref. 2.CrossRefGoogle Scholar
28.Collins, R.T, Schlesinger, Z., Koch, R.H., Laibowitz, R.B., Plaskett, T.S., Freitas, P., Gallagher, W.J., Sandstrom, R.L., and Dinger, T.R., Phys. Rev. 59 (1987) p. 704; C.S. Nichols, N.S. Shiren, R.B. Laibowitz, and T.G. Kazyaka, accepted for publication in Phys. Rev. B; J.P. Carini, A.M. Awasthi, W. Beyermann, G. Gruner, T. Hylton, K. Char, M.R. Beasley, and A. Kapatulnik, Phys. Rev. B 37 (1988) p. 9726.Google Scholar
29.Clark, G.J., LeGoues, F.K., Marwick, A.D., Laibowitz, R.B., and Koch, R.H., Appl. Phys. Lett. 51 (1987) p. 1462; G.J. Clark, F.K. LeGoues, R.B. Laibowitz, R. Koch, in High-Temperature Superconductors, edited by M.B. Brodsky and R.C. Dynes (Mater. Res. Soc. Symp. Proc. 99, Pittsburgh, PA, 1988) p. 127.CrossRefGoogle Scholar
30.LeGoues, F.K., Phil. Mag. 57 (1988) p. 167.CrossRefGoogle Scholar
31.Dimos, D., Chaudhari, P., Mannhart, J., and LeGoues, F.K., Phys. Rev. Lett. 61 (1988) p. 219.CrossRefGoogle Scholar
32.Mansour, A., Hilleke, R.O., Felcher, G.P., Laibowitz, R.B., and Chaudhari, P., Proc. International Conf. on Neutron Scattering, Grenoble, July 1988: to be published Physica, 1989; A.T. Fiory, A.F. Hebard, P.M. Mankiewich, and R.E. Howard, Phys. Rev. Lett. 61 (1988) p. 1419; L. Krusin-Elbaum, R.L. Greene, F. Holtzberg, A.P. Malozemoff, and Y. Yeshurun, submitted Phys. Rev. B.Google Scholar
33. See for example, Naito, M., Smith, P.E., Kirk, M.D., Oh, B., Hahn, M.R., Char, K., Mitzi, D.B., Sun, J.Z., Webb, D.J., Beasley, M.R., Fischer, O., Geballe, T.H., Hammond, R.H., Kapitulnik, A., and Quate, C.F., Phys. Rev. B 35 (1987) p. 7228; I. Iguchi, H. Watanabe, Y. Kasai, T. Mochiku, A. Sugishita, and E. Yamaka, Jpn. J. Appl. Phys. 26 (1987) p. 645; T Shiota, K. Takechi, Y. Takai, and H. Hayakawa, Proc. 1st International Symposium on Superconductivity, Nagoya, Japan, August 28-31,1988; M. Lee, M. Naito, A. Kapitulnik, and M.R. Beasley, preprint.CrossRefGoogle Scholar
34.Koch, R.H.et al., unpublished results.Google Scholar
35.Koch, R.H., Umbach, C.P., Oprysko, M.M., Mannhart, J.D., Bumble, B., Clark, G.J., Gallagher, W.J., Gupta, A., Kleinsasser, A., Laibowitz, R.B., Sandstrom, R.L., and Scheuermann, M.R., Physica C C1.5 (1988) p. 1685.CrossRefGoogle Scholar
36. See IBM J. of Res. and Dev. 24 (1980) and references within.Google Scholar
37.Yoshizako, Y., Tonouchi, M., and Kobayashi, T., JJAP 26 L1533 (1987).Google Scholar
38.Gallagher, W.J., Koch, R.H., Sandstrom, R.L., Laibowitz, R.B., Kleinsasser, A.W., Bumble, B., and Chisholm, M.F., Proc. 1st International Symposium on Superconductivity, Nagoya, Japan, August 28-31, 1988.Google Scholar
39.Koch, R.H.et al., unpublished results.Google Scholar
40.Grischkowsky, D., Sprik, R., Ketchen, M.B., Chi, C.C., Duling, I.N. III, Chaudhari, P., Koch, R.H., and Laibowitz, R.B., Conf. on Lasers and Electro-Optics Tech. Digest Series 1988 7 (Optical Society of America, Washington, DC, 1988), p. 386387; D.R. Dykaar, R. Sobolewski, J.M. Chwalek, J.F. Whitaker, T.Y Hsiang, G.A. Mourou, D.K. Lathrop, S.E. Russek, and R.A. Buhrman, Appl. Phys. Lett. 52 (1988) p. 1444.Google Scholar
41.Lee, W.Y., Salem, J., Lee, V.Y., Huang, T., Savoy, R., Delme, V., and Duran, J., Appl. Phys. Lett. 52 (1988) p. 2263; A. Mogro-Campero and L.G. Turner, Appl. Phys. Lett: 52 (1988) p. 1185; P. Berberich, J. Tate, W. Dietsche, and H. Kinder, Appl. Phys. Lett. 53 (1988) p. 925; T. Venkatesan, E.W. Chase, X.D. Wu, A. Inam, C.C. Chang, and F.K. Shokooki, Appl. Phys. Lett. 53 (1988) p. 243.CrossRefGoogle Scholar
42.Laibowitz, R.B., Koch, R.H., Gallagher, W.J., Sandstrom, R.L., Bumble, B., and Viggiano, J.M., unpublished results.Google Scholar