Hostname: page-component-7479d7b7d-wxhwt Total loading time: 0 Render date: 2024-07-09T06:29:32.480Z Has data issue: false hasContentIssue false
  • English
  • Français

Development and Application of an Abrasive-Free Polishing Solution for Copper

Published online by Cambridge University Press:  31 January 2011

Masanobu Hanazono ,
Jin Amanokura  and
Yasuo Kamigata
Get access

Abstract

An abrasive-free polishing (AFP) solution for chemical–mechanical planarization (CMP) of copper films on semiconductor wafers has been developed to overcome such disadvantages of conventional CMP as dishing, erosion, Cu and oxide loss, and microscratching. Electrochemical methods are an effective way of understanding the role of each chemical component in the AFP solution in order to optimize its performance. Analysis of the reaction layer of Cu elucidates the reasons for the excellent results that have been obtained. By applying the AFP solution for Cu CMP in combination with a slurry for CMP of the metal barrier layer, seven-level multilayer Cu interconnections can be successfully fabricated.

Keywords

abrasive-free polishingchemical–mechanical planarizationchemical–mechanical polishingCMPchemical reactivityelectronic materialssemiconductor materials.
Type
Research Article
Information
MRS Bulletin , Volume 27 , Issue 10: Advances in Chemical-Mechanical Planarization , October 2002 , pp. 772 - 775
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Edelstein, D., Heidenreich, J., and Goldblatt, R., in IEDM Tech. Dig. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1997) p. 773.Google Scholar
2.Tyagi, S., Alavi, M., Bigwood, R., and Bramlet, T., in IEDM Tech. Dig. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2000) p. 567.Google Scholar
3.Besser, P., Marathe, A., and Zhao, L., in IEDM Tech. Dig. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2000) p. 119.Google Scholar
4.Osseo-Asare, K. and Mishara, K., J. Electron. Mater. 25 (10) (1996) p. 1599.CrossRefGoogle Scholar
5.Kondo, S., Sakuma, N., Homma, Y., and Ohashi, N., in Proc. Int. Interconnect Technology Conf. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2000) p. 253.Google Scholar
6.Yamaguchi, H., Ohashi, N., Imai, T., and Hinode, K., in Proc. Int. Interconnect Technology Conf. (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 2000) p. 264.Google Scholar
7.Kamigata, Y., Kurata, Y., Masuda, K., Amanokura, J., Yoshida, M., and Hanazono, M., in Chemical–Mechanical Polishing 2001—Advances and Future Challenges, edited by Babu, S.V., Cadien, K.C., and Yano, H. (Mater. Res. Soc. Symp. Proc. 671, Warrendale, PA, 2001) p. M1.3.1.Google Scholar
8.Kondo, S., Homma, Y., Sakuma, N., Takeda, K., and Hinode, K., Polishing Method, Eur. Pat. Appl. EP0913442A2, May 6, 1999.Google Scholar