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Doping and interface of homoepitaxial diamond for electronic applications

Published online by Cambridge University Press:  12 June 2014

Satoshi Yamasaki ,
Etienne Gheeraert  and
Yasuo Koide
Satoshi Yamasaki
Affiliation:
National Institute of Advanced Industrial Science and Technology, Japan; s-yamasaki@aist.go.jp
Etienne Gheeraert
Affiliation:
University of Grenoble Alpes, Institut NEEL, France; Etienne.gheeraert@neel.cnrs.fr
Yasuo Koide
Affiliation:
National Institute for Materials Science, Japan; koide.yasuo@nims.go.jp
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Abstract

Diamond has been attracting the attention of many researchers because of its potential for new applications such as in quantum devices and power electronics. These applications are enabled by the progress made in improving the quality of undoped, boron-doped, and phosphorus-doped diamond films grown by chemical vapor deposition techniques. Recent progress in diamond film growth and heterostructures of diamond and other compound semiconductors to realize these electronics applications are reported.

Keywords

diamonddopantelectronic materialchemical vapor deposition (CVD)
Type
Research Article
Information
MRS Bulletin , Volume 39 , Issue 6: CVD Diamond—Research, Applications, and Challenges , June 2014 , pp. 499 - 503
Copyright
Copyright © Materials Research Society 2014 

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