Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Sosso, G.C.
and
Bernasconi, M.
2019.
Harnessing machine learning potentials to understand the functional properties of phase-change materials.
MRS Bulletin,
Vol. 44,
Issue. 09,
p.
705.
Zhang, Wei
Mazzarello, Riccardo
and
Ma, Evan
2019.
Phase-change materials in electronics and photonics.
MRS Bulletin,
Vol. 44,
Issue. 09,
p.
686.
Jin, Hai
Chen, Di
Liu, Haikun
Liao, Xiaofei
Guo, Rentong
and
Zhang, Yu
2020.
Miss Penalty Aware Cache Replacement for Hybrid Memory Systems.
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems,
Vol. 39,
Issue. 12,
p.
4669.
Oh, Sang Ho
Baek, Kyungjoon
Son, Sung Kyu
Song, Kyung
Oh, Jang Won
Jeon, Seung-Joon
Kim, Won
Yoo, Jong Hee
and
Lee, Kee Jeung
2020.
In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge2Sb2Te5.
Nanoscale Advances,
Vol. 2,
Issue. 9,
p.
3841.
Zhang, Wei
and
Ma, Evan
2020.
Unveiling the structural origin to control resistance drift in phase-change memory materials.
Materials Today,
Vol. 41,
Issue. ,
p.
156.
Durai, Suresh
Raj, Srinivasan
and
Manivannan, Anbarasu
2020.
Impact of process-induced variability on the performance and scaling of Ge2Sb2Te5 Phase-change memory device.
Semiconductor Science and Technology,
Vol. 35,
Issue. 3,
p.
035031.
Shen, Jiabin
Li, Tao
Chen, Xin
Jia, Shujing
Lv, Shilong
Li, Lin
Song, Zhitang
and
Zhu, Min
2020.
Dynamic evolution of thermally induced element distribution in nitrogen modified phase change materials.
Journal of Applied Physics,
Vol. 128,
Issue. 7,
Cobelli, M.
Galante, M.
Gabardi, S.
Sanvito, S.
and
Bernasconi, M.
2020.
First-Principles Study of Electromigration in the Metallic Liquid State of GeTe and Sb2Te3 Phase-Change Compounds.
The Journal of Physical Chemistry C,
Vol. 124,
Issue. 17,
p.
9599.
Durai, Suresh
Raj, Srinivasan
and
Manivannan, Anbarasu
2020.
An extremely fast, energy-efficient RESET process in Ge2Sb2Te5 phase change memory device revealed by the choice of electrode materials and interface effects.
Semiconductor Science and Technology,
Vol. 35,
Issue. 1,
p.
015022.
Delaney, Matthew
Zeimpekis, Ioannis
Du, Han
Yan, Xingzhao
Banakar, Mehdi
Thomson, David J.
Hewak, Daniel W.
and
Muskens, Otto L.
2021.
Nonvolatile programmable silicon photonics using an ultralow-loss Sb
2
Se
3
phase change material
.
Science Advances,
Vol. 7,
Issue. 25,
Wang, Xudong
Wu, Yue
Zhou, Yuxing
Deringer, Volker L.
and
Zhang, Wei
2021.
Bonding nature and optical contrast of TiTe2/Sb2Te3 phase-change heterostructure.
Materials Science in Semiconductor Processing,
Vol. 135,
Issue. ,
p.
106080.
Noori, Yasir J.
Meng, Lingcong
Jaafar, Ayoub H.
Zhang, Wenjian
Kissling, Gabriela P.
Han, Yisong
Abdelazim, Nema
Alibouri, Mehrdad
LeBlanc, Kathleen
Zhelev, Nikolay
Huang, Ruomeng
Beanland, Richard
Smith, David C.
Reid, Gillian
de Groot, Kees
and
Bartlett, Philip N.
2021.
Phase-Change Memory by GeSbTe Electrodeposition in Crossbar Arrays.
ACS Applied Electronic Materials,
Vol. 3,
Issue. 8,
p.
3610.
Shcheglevatyh, A. N.
and
Ovechkin, S. A.
2021.
Endurance product for sprinters.
Proceedings of the Voronezh State University of Engineering Technologies,
Vol. 83,
Issue. 1,
p.
253.
Arjunan, Mozhikunnam Sreekrishnan
Durai, Suresh
and
Manivannan, Anbarasu
2021.
Multilevel Switching in Phase‐Change Photonic Memory Devices.
physica status solidi (RRL) – Rapid Research Letters,
Vol. 15,
Issue. 11,
Liu, Bin
Li, Kaiqi
Liu, Wanliang
Zhou, Jian
Wu, Liangcai
Song, Zhitang
Elliott, Stephen R.
and
Sun, Zhimei
2021.
Multi-level phase-change memory with ultralow power consumption and resistance drift.
Science Bulletin,
Vol. 66,
Issue. 21,
p.
2217.
Luong, Minh Anh
Ran, Sijia
Bernard, Mathieu
and
Claverie, Alain
2022.
An experimental study of Ge diffusion through Ge2Sb2Te5.
Materials Science in Semiconductor Processing,
Vol. 152,
Issue. ,
p.
107101.
Murai, Toshiya
shoji, Yuya
and
Mizumoto, Tetsuya
2022.
Light-induced thermomagnetic recording of thin-film magnet CoFeB on silicon waveguide for on-chip magneto-optical memory.
Optics Express,
Vol. 30,
Issue. 11,
p.
18054.
Lian, Xiaojuan
Liu, Cunhu
Fu, Jinke
Liu, Xiaoyan
Ren, Qingying
Wan, Xiang
Xiao, Wanang
Cai, Zhikuang
and
Wang, Lei
2022.
Design of plasmonic enhanced all-optical phase-change memory for secondary storage applications.
Nanotechnology,
Vol. 33,
Issue. 49,
p.
495204.
Garzón, Esteban
Yavits, Leonid
Lanuzza, Marco
and
Teman, Adam
2022.
Wiley Encyclopedia of Electrical and Electronics Engineering.
p.
1.
Yoo, Chanyoung
Jeon, Jeong Woo
Yoon, Seungjae
Cheng, Yan
Han, Gyuseung
Choi, Wonho
Park, Byongwoo
Jeon, Gwangsik
Jeon, Sangmin
Kim, Woohyun
Zheng, Yonghui
Lee, Jongho
Ahn, Junku
Cho, Sunglae
Clendenning, Scott B.
Karpov, Ilya V.
Lee, Yoon Kyung
Choi, Jung‐Hae
and
Hwang, Cheol Seong
2022.
Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory.
Advanced Materials,
Vol. 34,
Issue. 50,