Hostname: page-component-7479d7b7d-k7p5g Total loading time: 0 Render date: 2024-07-15T23:27:28.787Z Has data issue: false hasContentIssue false
  • English
  • Français

Memristive response of a new class of hydrated vanadium oxide intercalation compounds

Published online by Cambridge University Press:  14 August 2017

Justin L. Andrews ,
Sujay Singh ,
Colin Kilcoyne ,
Patrick J. Shamberger ,
G. Sambandamurthy  and
Sarbajit Banerjee Open the ORCID record for Sarbajit Banerjee [Opens in a new window]
Justin L. Andrews
Affiliation:
Department of Chemistry, Texas A&M University, College Station, TX 77843, USA Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA
Sujay Singh
Affiliation:
Department of Physics, University at Buffalo, State University of New York, 239 Fronczak Hall, Buffalo, NY 14260, USA
Colin Kilcoyne
Affiliation:
Department of Physics, University at Buffalo, State University of New York, 239 Fronczak Hall, Buffalo, NY 14260, USA
Patrick J. Shamberger
Affiliation:
Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA
G. Sambandamurthy*
Affiliation:
Department of Physics, University at Buffalo, State University of New York, 239 Fronczak Hall, Buffalo, NY 14260, USA
Sarbajit Banerjee*
Affiliation:
Department of Chemistry, Texas A&M University, College Station, TX 77843, USA Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA
*
Address all correspondence to G. Sambandamurthy, Sarbajit Banerjee at sg82@buffalo.edu, banerjee@chem.tamu.edu
Address all correspondence to G. Sambandamurthy, Sarbajit Banerjee at sg82@buffalo.edu, banerjee@chem.tamu.edu
Get access

Abstract

The practical realization of energy-efficient computing vectors is imperative to address the break-down in the scaling of power consumption with transistor dimensions, which has led to substantial underutilized chip space. Memristive elements that encode information in multiple internal states and reflect the dynamical evolution of these states are a promising alternative. Herein we report the observation of pinched loop hysteretic type-II memristive behavior in single-crystalline nanowires of a versatile class of layered vanadium oxide bronzes with the composition δ-[M(H2O)4]0.25V2O5 (M = Co, Ni, Zn), the origin of which is thought to be the diffusion of protons in the interlayer regions.

Type
Research Letters
Information
MRS Communications , Volume 7 , Issue 3 , September 2017 , pp. 634 - 641
Copyright
Copyright © Materials Research Society 2017 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Dennard, R.H., Gaensslen, F.H., Rideout, V.L., Bassous, E., and LeBlanc, A.R..: Design of ion-implanted MOSFET's with very small physical dimensions. Proc. IEEE 87, 668 (1999).Google Scholar
2.Taylor, M.B..: A landscape of the new dark silicon design regime. IEEE Micro 33, 8 (2013).Google Scholar
3.Zhou, Y. and Ramanathan, S..: Correlated electron materials and field effect transistors for logic: a review. Crit. Rev. Solid State Mater. Sci. 38, 286 (2013).Google Scholar
4.Chua, L.O., and Kang, S.M..: Memristive devices and systems. Proc. IEEE 64, 209 (1976).Google Scholar
5.Pershin, Y.V., and Di Ventra, M.: Memory effects in complex materials and nanoscale systems. Adv. Phys. 60, 145 (2011).Google Scholar
6.Pickett, M.D., Medeiros-Ribeiro, G., and Williams, R.S..: A scalable neuristor built with Mott memristors. Nat. Mater. 12, 114 (2013).Google Scholar
7.Kim, T.H., Jang, E.Y., Lee, N.J., Choi, D.J., Lee, K.J., Jang, J.T., Choi, J.S., Moon, S.H., and Cheon, J..: Nanoparticle assemblies as memristors. Nano Lett. 9, 2229 (2009).Google Scholar
8.Marley, P.M., Horrocks, G.A., Pelcher, K.E., and Banerjee, S..: Transformers: the changing phases of low-dimensional vanadium oxide bronzes. Chem. Commun. 51, 5181 (2015).Google Scholar
9.Ha, S.D. and Ramanathan, S..: Adaptive oxide electronics: a review. J. Appl. Phys. 110, 71101 (2011).Google Scholar
10.Sun, Z., Liao, T., Dou, Y., Hwang, S.M., Park, M.-S., Jiang, L., Kim, J.H., and Dou, S.X..: Generalized self-assembly of scalable two-dimensional transition metal oxide nanosheets. Nat. Commun. 5, 3813 (2014).Google Scholar
11.Driscoll, T., Kim, H.-T., Chae, B.-G., Kim, B.-J., Lee, Y.-W., Jokerst, N.M., Palit, S., Smith, D.R., Di Ventra, M., and Basov, D.N..: Memory metamaterials. Science 325, 1518 (2009).Google Scholar
12.Whittaker, L., Patridge, C.J., and Banerjee, S..: Microscopic and nanoscale perspective of the metal-insulator phase transitions of VO2: some new twists to an old tale. J. Phys. Chem. Lett. 2, 745 (2011).Google Scholar
13.Singh, S., Abtew, T.A., Horrocks, G., Kilcoyne, C., Marley, P.M., Stabile, A.A., Banerjee, S., Zhang, P., and Sambandamurthy, G..: Selective electrochemical reactivity of rutile VO2 towards the suppression of metal-insulator transition. Phys. Rev. B 93, 125132 (2016).Google Scholar
14.Shi, J., Ha, S.D., Zhou, Y., Schoofs, F., and Ramanathan, S..: A correlated nickelate synaptic transistor. Nat. Commun. 4, 3676 (2013).Google Scholar
15.Wu, T.-L., Stabile, A.A., Patridge, C.J., Banerjee, S., and Sambandamurthy, G..: Electrically driven metal-insulator switching in δ-KxV2O5 nanowires. Appl. Phys. Lett. 101, 163502 (2012).Google Scholar
16.Marley, P.M., Stabile, A.A., Kwan, C.P., Singh, S., Zhang, P., Sambandamurthy, G., and Banerjee, S..: Charge disproportionation and voltage-induced metal-insulator transitions evidenced in β-PbxV2O5 nanowires. Adv. Funct. Mater. 23, 153 (2013).Google Scholar
17.Marley, P.M., Singh, S., Abtew, T.A., Jaye, C., Fischer, D.A., Zhang, P., Sambandamurthy, G., and Banerjee, S..: Electronic phase transitions of δ-AgxV2O5 nanowires: Interplay between geometric and electronic structures. J. Phys. Chem. C 118, 21235 (2014).Google Scholar
18.Yan, B., and Maggard, P.A..: M(bipyridine)V4O10 (M = Cu, Ag): Hybrid analogues of low-dimensional reduced vanadates. Inorg. Chem. 46, 6640 (2007).Google Scholar
19.Marley, P.M., and Banerjee, S..: Reversible interconversion of a divalent vanadium bronze between δ and β quasi-1D structures. Inorg. Chem. 51, 5264 (2012).Google Scholar
20.Oka, Y., Yao, T., and Yamamoto, N..: Crystal structures of hydrated vanadium oxides with δ-Type V2O5 Layers: δ-M0.25V2O5·H2O, M, Ca, Ni. J. Solid State Chem. 329, 323 (1997).Google Scholar
21.Clites, M., Byles, B.W., and Pomerantseva, E..: Effect of aging and hydrothermal treatment on electrochemical performance of chemically pre-intercalated Na–V–O nanowires for Na-ion batteries. J. Mater. Chem. A 4, 7754 (2016).Google Scholar
22.Andrews, J.L., De Jesus, L.R., Tolhurst, T.M., Marley, P.M., Moewes, A., and Banerjee, S..: Intercalation-induced dimensional reduction and thickness-modulated electronic structure of a layered ternary vanadium oxide. Chem. Mater. 29, 3285 (2017).Google Scholar
23.Savel'ev, S.E., Alexandrov, A.S., Bratkovsky, A.M., and Williams, R.S..: Molecular dynamics simulations of oxide memristors: thermal effects. Appl. Phys. A Mater. Sci. Process. 102, 891 (2011).Google Scholar
24.Yao, T., Oka, Y., and Yamamoto, N..: Layered structures of hydrated vanadium oxides. Part 2. Alkali-metal Intercalates. J. Mater. Chem. 2, 337 (1992).Google Scholar
25.Yang, J.J., Pickett, M.D., Li, X., Ohlberg, D.A.A., Stewart, D.R., and Williams, R.S..: Memristive switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3, 429 (2008).Google Scholar
26.Milic, N.B., and Jelic, R.M..: Hydrolysis of zinc(II) ion in sodium nitrate, chloride and perchlorate medium: the effect of the anionic medium. J. Chem. Soc., Dalt. Trans. 3, 3597 (1995).Google Scholar
27.Giasson, G., and Tewari, P.H..: Hydrolysis of Co(II) at elevated temperatures. Can. J. Chem. 56, 435 (1978).Google Scholar
28.Baes, C.F., and Mesmer, R.S..: The hydrolysis of cations. Ber. Bunsenges. Phys. Chemie 81, 245 (1977).Google Scholar
29.Parija, A., Prendergast, D., and Banerjee, S..: Evaluation of multivalent cation insertion in single- and double-layered polymorphs of V2O5. ACS Appl. Mater. Interfaces 9, 23756 (2017).Google Scholar
30.Nightingale, E.R..: Phenomenological theory of ion solvation. Effective Radii of hydrated ions. J. Phys. Chem. 63, 1381 (1959).Google Scholar
Supplementary material: File

Andrews supplementary material

Andrews supplementary material

Download Andrews supplementary material(File)
File 1.7 MB