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High-frequency organic rectifiers through interface engineering

Published online by Cambridge University Press:  20 September 2017

Chan-mo Kang ,
Hyeonwoo Shin  and
Changhee Lee Open the ORCID record for Changhee Lee [Opens in a new window]
Chan-mo Kang
Affiliation:
IoT Research Division, Electronics and Telecommunications Research Institute, Daejeon 34129, Korea
Hyeonwoo Shin
Affiliation:
Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, 08826, Korea
Changhee Lee*
Affiliation:
Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, 08826, Korea
*
Address all correspondence to C. Lee at chlee7@snu.ac.kr
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Abstract

The demand for high-frequency (HF) and low-cost rectifiers has encouraged many researchers to investigate organic rectifiers. Recently, organic rectifiers with enhanced intrinsic carrier mobility and charge injection efficiency have enabled operating frequencies to reach up to a gigahertz (GHz). The metal/organic and organic/organic interfaces have played a significant role in determining the electrical properties of the organic rectifiers. In this prospective article, we review the structure of organic rectifiers and present the current state-of-the-art to attain their HF performance. We discuss methods for improving their electrical properties using interface engineering and present future prospects for practical use of GHz-operable organic rectifiers.

Type
Prospective Articles
Information
MRS Communications , Volume 7 , Issue 4 , December 2017 , pp. 755 - 769
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Copyright
Copyright © Materials Research Society 2017 

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