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Thermal conductivity of synthetic boron-doped single-crystal HPHT diamond from 20 to 400 K

Published online by Cambridge University Press:  28 March 2016

D. Prikhodko ,
S. Tarelkin ,
V. Bormashov ,
A. Golovanov ,
M. Kuznetsov ,
D. Teteruk ,
A. Volkov  and
S. Buga
D. Prikhodko
Affiliation:
Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia Moscow Institute of Physics and Technology, 141700, 9 Institutskiy per., Dolgoprudny, Moscow Region, Russia
S. Tarelkin
Affiliation:
Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia Moscow Institute of Physics and Technology, 141700, 9 Institutskiy per., Dolgoprudny, Moscow Region, Russia National University of Science and Technology MISiS, 119049, 2 Leninskiy Prospect, Moscow, Russia
V. Bormashov*
Affiliation:
Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia Moscow Institute of Physics and Technology, 141700, 9 Institutskiy per., Dolgoprudny, Moscow Region, Russia
A. Golovanov
Affiliation:
Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia Moscow Institute of Physics and Technology, 141700, 9 Institutskiy per., Dolgoprudny, Moscow Region, Russia
M. Kuznetsov
Affiliation:
Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia
D. Teteruk
Affiliation:
Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia
A. Volkov
Affiliation:
Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia Moscow Institute of Physics and Technology, 141700, 9 Institutskiy per., Dolgoprudny, Moscow Region, Russia
S. Buga
Affiliation:
Technological Institute for Superhard and Novel Carbon Materials, 142190, 7a Tsentralnaya Street, Troitsk, Moscow, Russia Moscow Institute of Physics and Technology, 141700, 9 Institutskiy per., Dolgoprudny, Moscow Region, Russia
*
Address all correspondence to V. Bormashov at bormashov@gmail.com
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Abstract

Thermal conductivity of single-crystal boron-doped diamond (BDD) was studied in comparison with high-quality pure IIa-type diamond in the temperature range from 20 to 400 K. Boron content in BDD was about 1019 cm−3 that is a typical value of p+ substrates used for power device applications. The thermal conductivity of BDD is about 10 times less than that of IIa diamond near 100 K, but above room temperature the difference is <30%. The observed deviation mostly takes place due to acoustic phonon scattering on extended structural defects occurring in synthetic diamond at high boron content.

Type
Research Letters
Information
MRS Communications , Volume 6 , Issue 2 , June 2016 , pp. 71 - 76
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Copyright
Copyright © Materials Research Society 2016 

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