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Tin sulfide (SnS) thin-film solar cells deposited by organic chemical vapor sulfurization based on CdS and high transmittance Cd(S,O) n-type layers with the superstrate device structure

Published online by Cambridge University Press:  16 October 2020

Faruk Ballipinar
Faruk Ballipinar*
Affiliation:
Department of Electrical and Computer Engineering, Center for Autonomous Solar Power (CASP), Binghamton University, State University of New York, Binghamton, NY13902, USA
*
Address all correspondence to Faruk Ballipinar at fballip1@binghamton.edu
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Abstract

In this work, RF-sputtered metallic tin (Sn) film was sulfurized through di-tert-butyl-disulfide vapor at 350 °C for 150, 180, 210, and 240 min. According to the Raman spectra analysis, 210 min was sufficient to form dominantly SnS film. X-ray diffraction and X-ray photoelectron spectroscopy (XPS) studies of SnS film were evaluated. The n-type window layers CdS and high transmittance Cd(S,O) were deposited by chemical bath deposition through two different baths without and with TX-100 surfactant, respectively. XPS analysis of CdS and Cd(S,O) films was carried out. SnS solar cells formed in the superstrate solar cell device configuration. The photovoltaic performances were evaluated.

Type
Research Letters
Information
MRS Communications , Volume 10 , Issue 4 , December 2020 , pp. 660 - 666
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Copyright
Copyright © The Author(s), 2020, published on behalf of Materials Research Society by Cambridge University Press

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