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Accelerated sintering of SiC Nanopowder with Stacking Disorder-Order Transformation

Published online by Cambridge University Press:  26 February 2011

Kenshiro Shirai
Affiliation:
t05d003@students.chem.ryukoku.ac.jp, Ryukoku University, Materials Chemistry, Japan
Takeshi A Yamamoto
Affiliation:
yamamoto@project1.hrc.ryukoku.ac.jp, Ryukoku University, High-tech Research Center, Japan
Manshi Ohyanagi
Affiliation:
ohyanagi@rins.ryukoku.ac.jp, Ryukoku University, Materials Chemistry, Japan
Zuhair A Munir
Affiliation:
zamunir@ucdavis.edu, University of California, Davis, Chemical Engineering and Materials Science, United States
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Abstract

Consolidation of SiC nanopowder with stacking disordered structure was accelerated by milling with the AlN as the additive. SiC powders without the additive was sintered at 1900°C to a density of 99%. The grain size of the sintered material was approximately 500 nm. On the other hand, with AlN as additive, the sintering temperature to reach a density of 98% was reduced to 1700°C by the addition of 1.0 mol% AlN. The grain size of this material was less than 100 nm. The effect of AlN addition on SiC sintering with disorder-order transformation was evaluated by shrinkage profile, XRD analysis, and TEM observation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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