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Adhesion Promoting Photo-Acid Generator APPAG - A New Class of Lithographic Material

Published online by Cambridge University Press:  17 March 2011

Shalini Sharma ,
Geeta Sharma  and
Robert Meagley
Shalini Sharma
Affiliation:
Molecular Foundry, MSD, Lawrence Berkeley National Lab, Berkeley, CA, 94720
Geeta Sharma
Affiliation:
Molecular Foundry, MSD, Lawrence Berkeley National Lab, Berkeley, CA, 94720
Robert Meagley
Affiliation:
Components Research, Intel Corp., Berkeley, CA, 94720
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Abstract

Photo-acid generator (PAG) is the key component responsible for the increased sensitivity of chemically amplified resists in use today for microelectronics production. Concentration variation of PAG through the thickness of the photoresist film adversely affects materialís performance. To offset reduced acid concentration at the bottom of the resist, we have developed adhesion promoting photo acid generators, called as a class “APPAG” that enhance acid concentration at interface between the resist and the substrate. An overview on the preparation and characterization of two siloxane based APPAG materials along with a performance comparison of commercial DUV and EUV resists on APPAG is provided. Longer diffusion length photo-acid generator (APPAG 9) retained square profile of critical dimension (CD) at off-focus values and was found to give nearly a 50% improvement in depth of focus for 250nm node DUV lithography. For EUV lithography, both shorter diffusion length APPAG 6 and APPAG 9 were shown to substantially improve performance envelope for 100nm dense lines and spaces at reduced post exposure bake (PEB).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1002: Symposium N – Printing Methods for Electronics, Photonics and Biomaterials , 2007 , 1002-N05-03
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1.(a) Wu, Wen-li, Prabhu, Vivek M., and Lin, Eric K.. SPIE Advances in Resists Technology and Processing XXIV, 6519, 651902, 2007.Google Scholar
(b) Wei, Yayi et al. SPIE Advances in Resists Technology and Processing XXIV, 6519, 65190R, 2007.Google Scholar
(c) Willson, C.G.; Ito, H.; Fréchet, J.M.J.; Houlihan, F. Proceedings of IUPAC 28th Macromolecular Symposium, Amherst, Mass, 448, 1982.Google Scholar
2. Willson Grant, C. Polymer Preprints 47(1) 530, 2006 Google Scholar
3. Meagley, R. P.. Future Fab international, 21, 2006.Google Scholar
4.(a) Soo, C. P., et al. IEEE Transactions on Semiconductor Manufacturing,, 12, 4, 462, 1999.Google Scholar
(b) Cheung, C., et al, GaAs ManTech, The International Conference on Compound Semiconductor Manufacturing Technology, 14, 10, 2005.Google Scholar
5. Reichmanis, E., Nalamasu, O.. Science, 297, 349, 2002.Google Scholar
6. Sharma, S., et al, J. Macromolecular Sci., 45(6), 2006.Google Scholar
7. Tang, C.S.F., Rapoport, H.. J. Org. Chem. 33, 2806–2809, 1973.Google Scholar
8. Yueh, W., Cao, H. B., Thirumala, V., Choi, H.. SPIE Advances in Resist Technology and Processing XXII, 5753, 765, 2005.Google Scholar