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Advantages of MIS Processing on Passivated Polycrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

G. Rajeswaran ,
M. Thayer ,
V. J. Rao  and
W. A. Anderson
G. Rajeswaran
Affiliation:
Department of Electrical Engineering, State University of New York at Buffalo, 4232 Ridge Lea Road, Amherst, New York 14226
M. Thayer
Affiliation:
Department of Electrical Engineering, State University of New York at Buffalo, 4232 Ridge Lea Road, Amherst, New York 14226
V. J. Rao
Affiliation:
Department of Electrical Engineering, State University of New York at Buffalo, 4232 Ridge Lea Road, Amherst, New York 14226
W. A. Anderson
Affiliation:
Department of Electrical Engineering, State University of New York at Buffalo, 4232 Ridge Lea Road, Amherst, New York 14226
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Abstract

Wacker polycrystalline silicon shows enhanced grain boundary activity after a high temperature (950° C) anneal. It is possible to passivate this effect in a hydrogen plasma. The low temperature (600° C) processing of MIS technology does not activate grain boundaries or deteriorate a passivated specimen. Activated grain boundaries with MIS structures can be used to assess the character of recombination currents. It is concluded that MIS processing is advantageous for passivated polycrystalline silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 235
Copyright
Copyright © Materials Research Society 1982

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References

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