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AFM and STM Studies of Large Scale Unstable Growth Formed During GaAs (001) Homoepitaxy

Published online by Cambridge University Press:  22 February 2011

C. Orme ,
M.D. Johnson ,
K.T. Leung  and
B.G. Orr
C. Orme
Affiliation:
The University of Michigan, Harrison M. Randall Laboratory of Physics Ann Arbor MI 48109-1120
M.D. Johnson
Affiliation:
The University of Michigan, Harrison M. Randall Laboratory of Physics Ann Arbor MI 48109-1120
K.T. Leung
Affiliation:
The University of Michigan, Harrison M. Randall Laboratory of Physics Ann Arbor MI 48109-1120
B.G. Orr
Affiliation:
The University of Michigan, Harrison M. Randall Laboratory of Physics Ann Arbor MI 48109-1120
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Abstract

Atomic force and scanning tunneling microscopy studies have been performed on GaAs(001) films grown by molecular beam epitaxy. Multilayered mounds are seen to evolve when the growth conditions favor island nucleation. As the epilayer thickness is increased, these features grow in all dimensions but the angle of inclination remains approximately constant at 1°. The mounding does not occur on surfaces grown in stepflow. We propose that the multi-layered features are due to an unstable growth mode which relies on island nucleation and the presence of a step edge barrier.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 233
Copyright
Copyright © Materials Research Society 1994

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References

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