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AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer

Published online by Cambridge University Press:  11 February 2011

Z. Y. Fan ,
J. Li ,
J. Y. Lin ,
H. X. Jiang ,
Y. Liu ,
J. A. Bardwell ,
J. B. Webb  and
H. Tang
Z. Y. Fan
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506–2601, USA
J. Li
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506–2601, USA
J. Y. Lin
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506–2601, USA
H. X. Jiang
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas 66506–2601, USA
Y. Liu
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, ON, K1A 0R6, Canada
J. A. Bardwell
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, ON, K1A 0R6, Canada
J. B. Webb
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, ON, K1A 0R6, Canada
H. Tang
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, ON, K1A 0R6, Canada
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Abstract

The fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the δ-doped barrier are reported. The incorporation of the SiO2 insulated-gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the 2D channel carrier mobility. The device has a high drain-current-driving and gate-control capabilities as well as a very high gate-drain breakdown voltage of 200 V, a cutoff frequency of 15 GHz and a maximum frequency of oscillation of 34 GHz for a gate length of 1 μm. These characteristics indicate a great potential of this structure for high-power-microwave applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L9.11
Copyright
Copyright © Materials Research Society 2003

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References

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