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Al/Si Interface Characteristics Formed by Partially Ionized Beam Deposition at 2.5Kv

Published online by Cambridge University Press:  26 February 2011

J. Wong ,
C. Lam  and
T.-M. Lu
J. Wong
Affiliation:
Center for Integrated ElectronicsRensselaer Polytechnic Institute, Troy, New York 12180-3590
C. Lam
Affiliation:
Center for Integrated ElectronicsRensselaer Polytechnic Institute, Troy, New York 12180-3590
T.-M. Lu
Affiliation:
Center for Integrated ElectronicsRensselaer Polytechnic Institute, Troy, New York 12180-3590
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Abstract

Partially ionized beam (PIB) deposition technique was used to deposit Al thin film on Si(n) substrate. The fabricated Schottky diodes showed an anomalous C-V characteristics for the Al films deposited with a bias potential equal to 2.5kV. The 1/C2 vs. V plot showed a drastic decrease in the slope as compared to the diodes deposited without the bias potential. Further measurements showed a frequency dependence in the C-V characteristics. This anomalous C-V characteristics can be explained by the formation of a p-n junction diode underneath the Si surface. A model of self-ion implantation which explains the formation of this surface p-layer on the Si(n) substrate is proposed and tested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 189
Copyright
Copyright © Materials Research Society 1998

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References

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