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Alternative Mechanism for Defect Generation in a-Si:H

Published online by Cambridge University Press:  15 February 2011

David Redfield
David Redfield*
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA 94305
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Abstract

Recombination-driven mechanisms for defect formation do not account well for several experimental facts, and indeed conflict with some facts. To overcome these problems, an alternative mechanism is proposed in which latent defect centers are converted to metastable defects (dangling bonds) without a recombination event. The transitions are driven simply by electron capture at the center with no energy barrier. A new configuration-coordinate diagram expressing this mechanism includes essential configuration-induced changes in the energies of band edges, and accounts for several other previously problematic observations. This carrier-induced mechanism (CIM) is consistent with defect formation in forward bias and defect inhibition in reverse bias, light-enhanced annealing, as well as the usual light-induced and beam-induced formation. For low orħħωthe process starts by ionization of an existing defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 383
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Staebler, D., Crandall, R., and Williams, R., Appl. Phys. Lett. 39, 733 (1981).Google Scholar
2. Kruhler, W., Pfleiderer, H., Plattner, R., and Stetter, W., AIP Conf. Proc. 120, 311 (1984).Google Scholar
3. Crandall, R., Phys. Rev. B 36, 2645 (1987).Google Scholar
4. Hepburn, A., Marshall, J., Main, C., Powell, M., and van Berkel, C., Phys. Rev. Lett. 56, 2215 (1986).Google Scholar
5. Schropp, R. and Verwey, J., Appl. Phys. Lett. 50, 185 (1987).Google Scholar
6. Stradins, P. and Fritzsche, H., Phil. Mag. 69, 121 (1994).Google Scholar
7. FathaUah, M., Phil. Mag. B 61, 403 (1990).Google Scholar
8. Skumanich, A., Amer, N., and Jackson, W., Phys. Rev. B 31, 2263 (1985).Google Scholar
9. Gleskova, H., Morin, P., and Wagner, S., Appl. Phys. Lett. 62, 2063 (1993).Google Scholar
10. Globus, T., et al., Matl. Res. Soc. Symp. Proc. 336, 823 (1994)Google Scholar
11. Henry, C. and Lang, D., Phys. Rev. B 15, 989 (1977).Google Scholar
12. Meaudre, R., Solid State Comm. 89, 239 (1994).Google Scholar
13. Adler, David, in Semiconductors and Semimetals, 21A, 291 (1984), esp. Fig. 10.Google Scholar
14. Stutzmann, M., Phil Mag. B 56, 63 (1987).Google Scholar