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Alternative Routes to the MOVPE Growth of GaN and Aln

Published online by Cambridge University Press:  21 February 2011

V. Roberts ,
J. S. Roberts ,
A. C. Jones  and
S. Rushworth
V. Roberts
Affiliation:
University of Sheffield, Department of Electronic and Electrical Engineering, Sheffield, SI 3JD United Kingdom.
J. S. Roberts
Affiliation:
Epichem Limited, Power Road, Wirral, Merseyside, L62 3QF, United Kingdom
A. C. Jones
Affiliation:
Epichem Limited, Power Road, Wirral, Merseyside, L62 3QF, United Kingdom
S. Rushworth
Affiliation:
Epichem Limited, Power Road, Wirral, Merseyside, L62 3QF, United Kingdom
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Abstract

Alternative precursors to group-in nitrides have been studied based on two schemes: 1) The reaction Me3M (M=Al,Ga) with t-BuNH2 and 2) the decomposition of NH3 based adducts. Polycrystalline growth of AIN has been demonstrated by both routes. Decomposition of the adduct Me3Al:NH3 has been used to prepare epitaxial AIN on (0001) sapphire with an X-ray FWHM (full width at half maximum) of 16 arcrnin at a growth temperature of 1050C. Similar growth using analogous gallium precursors always resulted in gallium droplets. We have attributed this difference in chemical reactivities to the lower electronegativity of gallium compounds, thus leading to dissociation rather than sequential methane loss to form the nitride.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 337
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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