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Amorphization/templated Recrystallization (ATR) Method for Hybrid Orientation Substrates

Published online by Cambridge University Press:  01 February 2011

K. L. Saenger ,
J.P. de Souza ,
K.E. Fogel ,
J.A. Ott ,
A. Reznicek ,
C.Y. Sung ,
H. Yin  and
D.K. Sadana
K. L. Saenger
Affiliation:
saenger@watson.ibm.com, IBM T.J. Watson Research Center, Electronic Materials, P.O. Box 218, Yorktown Heights, New York, 10598, United States, 914-945-2977, 914-945-2141
J.P. de Souza
Affiliation:
souza1@us.ibm.com, IBM Semiconductor Research and Development Center, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York, 10598, United States
K.E. Fogel
Affiliation:
fogel@us.ibm.com, IBM Semiconductor Research and Development Center, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York, 10598, United States
J.A. Ott
Affiliation:
jaott@us.ibm.com, IBM Semiconductor Research and Development Center, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York, 10598, United States
A. Reznicek
Affiliation:
alexrez@us.ibm.com, IBM Semiconductor Research and Development Center, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York, 10598, United States
C.Y. Sung
Affiliation:
sungc@us.ibm.com, IBM Semiconductor Research and Development Center, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York, 10598, United States
H. Yin
Affiliation:
yinh@us.ibm.com, IBM Semiconductor Research and Development Center, Microelectronics Division, Hopewell Junction, New York, 12533, United States
D.K. Sadana
Affiliation:
dksadana@us.ibm.com, IBM Semiconductor Research and Development Center, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York, 10598, United States
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Abstract

Hybrid orientation substrates make it possible to have a CMOS technology in which nFETs are on (100) Si (the Si orientation in which electron mobility is the highest) and pFETs are on (110)-oriented Si (the Si orientation in which hole mobility is the highest). This talk will describe a new amorphization/templated recrystallization (ATR) method for fabricating bulk hybrid orientation substrates. In a preferred version of this method, a silicon layer with a (110) orientation is directly bonded to a Si base substrate with a (100) orientation. Si regions selected for an orientation change are amorphized by ion implantation and then recrystallized to the (100) orientation of the base substrate. After an overview of the ATR technique and its various implementations, we will describe some of the scientifically interesting materials and integration challenges encountered while reducing it to practice.

Keywords

Sicrystal growthmorphology
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D01-01
Copyright
Copyright © Materials Research Society 2006

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