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Amorphous Silicon Analogue Memory Elements

Published online by Cambridge University Press:  21 February 2011

M. J. Rose ,
J. Hajto ,
P. G. LeComber ,
A. J. Snell ,
A. E. Owen  and
J. S. Osborne
M. J. Rose
Affiliation:
University of Dundee, Dundee, Scotland, U.K.
J. Hajto
Affiliation:
University of Edinburgh, Edinburgh, Scotland, U.K.
P. G. LeComber
Affiliation:
University of Dundee, Dundee, Scotland, U.K.
A. J. Snell
Affiliation:
University of Edinburgh, Edinburgh, Scotland, U.K.
A. E. Owen
Affiliation:
University of Edinburgh, Edinburgh, Scotland, U.K.
J. S. Osborne
Affiliation:
University of Dundee, Dundee, Scotland, U.K.
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Abstract

Both Cr/p+/V and Cr/p+/Cr devices exhibit fast electrically programmable memory switching with a programmable voltage range, ΔVS, which depends only on the choice of the top metal. Despite a difference in ΔVS, both types of device have very similar electrical properties, but show one major difference in room temperature I-V characteristics, where under certain conditions, discontinuities are observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 525
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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