Hostname: page-component-7bb8b95d7b-cx56b Total loading time: 0 Render date: 2024-09-13T16:18:39.996Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorphous Silicon Image Sensor : Characteristics of an ITO/a-Si:H Junction

Published online by Cambridge University Press:  26 February 2011

S. Ri ,
H. Fujioka ,
K. Takasaki  and
K. Fujino
S. Ri
Affiliation:
Advanced Technology Division., Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
H. Fujioka
Affiliation:
Advanced Technology Division., Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
K. Takasaki
Affiliation:
Advanced Technology Division., Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
K. Fujino
Affiliation:
Advanced Technology Division., Fujitsu Ltd., 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211, JAPAN
Get access

Abstract

Indium tin oxide (ITO) film properties and hydrogenated amorphous silicon (a-Si:H) photo diode characteristics are described as a function of the oxygen partial pressure during ITO magnetron sputtering deposition. The photo diode has a Cr/a-Si:H/ITO structure. The a-Si:H and ITO bulk properties along with the a-Si:H/ITO interface properties are important to device performance.

The ITO film deposited at high oxygen partial pressures had a smooth surface and the target did not tarnish during sputtering deposition. Therefore, with respect to stability and reproducibility, ITO deposition at high oxygen partial pressures seems to be quite effective. A high dark photo diode reverse current due to presence Of SiOx (x<2) at the a-Si:H/ITO interface was observed. Portions of the SiOx (x<2) formations were changed to SiO2, by thermal annealing, causing the dark current to decrease remarkably.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 451
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Shewchun, J., Dubow, J., Myszkowski, A, and Singh, R., J. Appl, Phys. 49, 865 (1978)Google Scholar
2. Kagawa, T., Matsumoto, N., and Kumabe, K., Jpn. J. Appl. Phys. 21, 251 (1982)Google Scholar
3. Kaneko, S., Okumura, F., Sakamoto-, M., and Uchida, H.. The International Society for Optical Engineering, 617, 127 (1986)Google Scholar
4. Hamano, T., Ito, H., Nakamura, T., Ozawa, T., Fuse, M., and Takenouchi, M., Jpn. J. Appl. Phys. 21, 245 (1982)Google Scholar
5. Suzuki, K., Suda, Y., Takayama, S., Nakai, T., Mori, K., Takikawa, O., and Saito, T., IEEE, CHMT-7, 423 (1984)Google Scholar
6. Mizuhashi, I. and Adachi, K.,. Ceramics, 19, 295 (1984)Google Scholar
7. Fukada, N., Fukushima, Y., and Imura, T., J. Non-Cryst. Solid, 59 & 60, 525 (1983)Google Scholar
8. Ohsawa, M., Ishida, O., and Uchida, Y.; International Ion Engineering Congress ISIAT, 83 & IPAT KYOTO, 1963 (1983)Google Scholar
9. Kitagawa, M., Mori, K., Ishihara, S., Ohno, M., Htrano, T., Yoshioka, Y., and Kohiki, S., J. Appl. Phys. 54, 3269 (1983)Google Scholar