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Amorphous Silicon Selenium Alloy Film Deposited Under Hydrogen Dilution

Published online by Cambridge University Press:  21 February 2011

Muzhi He ,
Guang H. Lin  and
J. O'M. Bockris
Muzhi He
Affiliation:
Department of Chemistry, Texas ASM University, College Station, TX 77843
Guang H. Lin
Affiliation:
Department of Chemistry, Texas ASM University, College Station, TX 77843
J. O'M. Bockris
Affiliation:
Department of Chemistry, Texas ASM University, College Station, TX 77843
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Abstract

Amorphous silicon selenium alloy films were prepared by plasma enhanced chemical vapor deposition with hydrogen dilution. The flow rate ratio of hydrogen to silane was about 8:1. Amorphous silicon selenium alloy was found to have an optical bandgap ranging from 1.7 eV to 2.0 eV depending on the selenium concentration in the films. The light to dark conductivity ratios of the alloy films are ∼ 104. The optical and electrical properties, Urbach tail energy and sub-bandgap photo response spectroscopy of the alloy film were investigated. The film quality of the alloy deposited with hydrogen dilution is greatly improved comparing to that of the alloy film deposited without hydrogen dilution. The electron spin resonance experiment shows that selenium atom is a good dangling bond terminator.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 727
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Lin, G. H., Kapur, M., and Bockris, J. O'M., Appl. Phys. Lett. 57, 300 (1990).CrossRefGoogle Scholar
2. Lin, G. H., Kapur, M., and Bockris, J. O'M., Mat. Res. Soc. Symp. Proc. 165, 167 (1990).CrossRefGoogle Scholar
3. Lin, G. H., Kapur, M., He, M., and Bockris, J. O'M., J. Non-Cryst. Solid 127, 186 (1991).CrossRefGoogle Scholar
4. Wakim, F. G., Al-Jassar, A., and Abo-Namous, S. A., J. Non-Cryst. Solid 53, 11 (1982).Google Scholar
5. Matsuda, A., Yagii, M., Koyama, M., Toyama, M., Imanishi, Y., Ikuchi, N., and Tanaka, K., Appl. Phys. Lett. 47, 1061 (1985).CrossRefGoogle Scholar
6. Weller, H. C., Paasche, S. M., Nebell, C. E., Kessler, F., and Bauer, G. H., IEEE Photovol. Spec. Conf. 872 (1987).Google Scholar
7. Newton, J. L., Wood, G., and Catalano, A., IEEE Photovol. Spec. Conf. 862 (1987).Google Scholar
8. Matsuda, A., Yamaoka, T., Wolff, S., Koyama, M., Imanishi, Y., Kataoka, H., Kataoka, H., and Tanaka, K., J. Appl. Phys. 60, 4025 (1986).Google Scholar
9. Tauc, J., Grigorovici, R. and Vancu, A., Phys. Stat. Sol. 15, 627 (1966).Google Scholar