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Amorphous to Crystalline Structural Transition during Growth of Silicon by Plasma Enhanced Chemical vapor Deposition

Published online by Cambridge University Press:  25 February 2011

W. J. Varhue ,
S. Krause ,
J. Dea  and
C. O. Jung
W. J. Varhue
Affiliation:
University of Vermont, Department of Electrical Eng., Burlington, VT 05405
S. Krause
Affiliation:
Arizona State University, Department of Chem. Bio. and Materials Eng., Tempe, AZ 85287
J. Dea
Affiliation:
Arizona State University, Department of Chem. Bio. and Materials Eng., Tempe, AZ 85287
C. O. Jung
Affiliation:
Arizona State University, Department of Chem. Bio. and Materials Eng., Tempe, AZ 85287
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Abstract

The growth of thin Si films by RF glow discharge undergoes a transition from amorphous to microcrystalline as power density is increased. This results in a substantial change in the film's electrical conductivity and activation energy for electrical conduction. The RF glow discharge has been characterized in terms of plasma density, plasma potential and electron temperature with emissive Langmuir Probe measurements. The structural transition has been observed with a transmission electron microscope.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 269
Copyright
Copyright © Materials Research Society 1989

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References

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