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An Anomalous Deep Center (EC-0.31 Ev) in Semi-Insulating GaAs

Published online by Cambridge University Press:  15 February 2011

Z-Q. Fang  and
D. C. Look
Z-Q. Fang
Affiliation:
Physics Department, Wright State University, Dayton, OH 45435 USA
D. C. Look
Affiliation:
Physics Department, Wright State University, Dayton, OH 45435 USA
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Abstract

A prominent deep center in semi-insulating GaAs, T5 at Ec×0.31 eV, has been studied by thermally stimulated current (TSC) spectroscopy using variation of illumination energy, intensity, and time. Unlike the case for most of TSC traps, the steady-state (long illumination time) peak intensity of T5 varies with light intensity. With the additional evidence that T5 seems to be related to both AsGa and VAs, it is possible that a photoinduced interaction AsGa.-VAs→VGa,-Asi-VAs is taking place.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 405
Copyright
Copyright © Materials Research Society 1997

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