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An Anomalous Vacancy Diffusion in Silicon during the Antimony Drive-in Diffusion

Published online by Cambridge University Press:  25 February 2011

W. Wijaranakula  and
J.H. Matlock
W. Wijaranakula
Affiliation:
Materials Characterization Laboratory, SEH America, Incorporated 4111 Northeast 112th Avenue, Vancouver, Washington 98682-6776, USA
J.H. Matlock
Affiliation:
Materials Characterization Laboratory, SEH America, Incorporated 4111 Northeast 112th Avenue, Vancouver, Washington 98682-6776, USA
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Abstract

In the substrate region underneath the antimony buried layer, an enhanced oxygen donor generation and a retardation of the oxygen precipitation were observed. Both phenomena can be explained by the vacancy mechanism in which the charged vacancies dominate at high temperatures. Based upon this hypothetical model, it is suggested that the intrinsic vacancy concentration could play a significant role in both oxygen thermal donor generation and oxygen precipitation in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 597
Copyright
Copyright © Materials Research Society 1990

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References

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