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An Investigation of Spin and Charge States Associated with Metastable Defects in N-Type Hydrogenated Amorphous Silicon
Published online by Cambridge University Press: 21 February 2011
Abstract
Depletion-width-modulated (DWM) ESR spectroscopy and junction capacitance techniques were employed to investigate deep-defect states in various metastable states of 10 and 80 Vppm PH3-doped a-Si:H. From the joint application of these methods, we enumerate the change in total spin and charge associated with emission of carriers from states within the mobility gap resulting from a modulated bias voltage. We conclude that the magnitude of the modulated spin-to-charge ratio is nearly unity, consistent with earlier similar investigations of n-type a-Si:H, where the D-/D0 transition was shown to dominate. Furthermore, we present results of a previously unreported “quadrature” DWM-ESR signal of large magnitude under a wide range of experimental conditions. Similar related effects are also reported from spin- and capacitance-transient studies. These results clearly demonstrate that the changes in spin significandy lag corresponding changes in charge.
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- Copyright © Materials Research Society 1991
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