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An ODMR Study of The Killer Center Fe in GaP:O

Published online by Cambridge University Press:  28 February 2011

K. M. Lee ,
L. C. Kimerling  and
M. D. Sturge
K. M. Lee
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, NJ 07974
L. C. Kimerling
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, NJ 07974
M. D. Sturge
Affiliation:
Bell Communications Research, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

The role of the luminescence killer center iron in GaP has been studied by the optically detected magnetic resonance technique. Observations of strong Fe°(3d5) and O0 resonance in the (Zn,O) donor-acceptor pair (DAP) and the 0.841 eV electron capture (EC) luminescence bands show that the luminescence killing action is via (Fe,O) DAP recombination.

Two distinct but similar (Fe,O) DAP processes were detected: The (Fe0,O0) process with a slower recombination rate and (Fe0,O0*) process, with a faster effective relaxation rate, involving the oxygen excited state.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 319
Copyright
Copyright © Materials Research Society 1985

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References

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