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An XPS Study of Silicon Oxynitride Rapid Thermally Grown in Nitric Oxide

Published online by Cambridge University Press:  10 February 2011

W. H. Lai ,
M. F. Li ,
J. S. Pan ,
R. Liu ,
L. Chan  and
T. C. Chua
W. H. Lai
Affiliation:
Dept of Electrical Engineering, National University of Singapore, Singapore, laiwh@charteredsemi.com
M. F. Li
Affiliation:
Dept of Electrical Engineering, National University of Singapore, Singapore, laiwh@charteredsemi.com
J. S. Pan
Affiliation:
Central Characterization Laboratory, Institute of Materials Research and Engineering, Singapore
R. Liu
Affiliation:
Surface Science Lab, Dept of Physics, National University of Singapore, Singapore
L. Chan
Affiliation:
R & D Dept, Chartered Semiconductor Manufacturing Limited, Singapore
T. C. Chua
Affiliation:
Applied Materials South-East Asia Pte Ltd, Singapore
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Abstract

Earlier growth studies on the rapid thermal oxidation of silicon in NO (RTNO) were not sufficiently comprehensive and were limited by temperature measurement uncertainty and thermal non-uniformity across the wafer. Using a state-of-the-art rapid thermal processing (RTP) system, the RTNO growth characteristics at 100 and 760 Torr, from 900 to 1200°C and from 0 to 480 s were investigated. It was found that the initial growth rate anomalously decreasedwith temperature and pressure. These anomalies were correlated to the evolution of the XPS N 1s spectrum of the RTNO film with oxidation time, temperature and pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 171
Copyright
Copyright © Materials Research Society 2000

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References

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