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Analysis of MOS Device Capacitance-Voltage Characteristics Based on the Self-Consistent Solution of the Schrödinger and Poisson Equations

Published online by Cambridge University Press:  10 February 2011

C. Raynaud ,
J.L. Autran ,
P. Masson ,
M. Bidaud  and
A. Poncet
C. Raynaud
Affiliation:
New permanent address: CEGELY-ECPA, UPRESA CNRS 5005, Bâiment 303, Institut National des Science Appliquées de Lyon, 20, avenue A. Einstein, F-69621 Villeurbanne Cedex, France
J.L. Autran
Affiliation:
Laboratoire de Physique de la Matière (LPM), UMR CNRS 5511, Bâiment 502, Institut National des Science Appliquées de Lyon, 20, avenue A. Einstein, F-69621 Villeurbanne Cedex, France
P. Masson
Affiliation:
Laboratoire de Physique de la Matière (LPM), UMR CNRS 5511, Bâiment 502, Institut National des Science Appliquées de Lyon, 20, avenue A. Einstein, F-69621 Villeurbanne Cedex, France
M. Bidaud
Affiliation:
Laboratoire de Physique de la Matière (LPM), UMR CNRS 5511, Bâiment 502, Institut National des Science Appliquées de Lyon, 20, avenue A. Einstein, F-69621 Villeurbanne Cedex, France
A. Poncet
Affiliation:
Laboratoire de Physique de la Matière (LPM), UMR CNRS 5511, Bâiment 502, Institut National des Science Appliquées de Lyon, 20, avenue A. Einstein, F-69621 Villeurbanne Cedex, France
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Abstract

The one-dimensional Schridinger and Poisson equations have been numerically solved in metal-oxide-semiconductor devices using a three-point finite difference scheme with a non-uniform mesh size. The capacitance-voltage characteristic of the structure has been calculated via this self-consistent approach and results have been compared with data obtained from the resolution of Poisson equation using different approximated methods based on the Boltzmann statistic with and without a first order quantum effect correction or the exact Fermi-Dirac statistic. The present work permits to evaluate and quantify the errors made by these approximations in determining the thickness of ultra-thin oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 159
Copyright
Copyright © Materials Research Society 2000

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References

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